CHM2179a
W-band Mixer
GaAs Monolithic Microwave IC
Description
The CHM2179a is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. This circuit is manufactured
with the BES-MMIC process: 1 µm
Schottky diode device, air bridges, via
holes through the substrate, stepper
lithography.
It is available in chip form.
LO
RF
IF
-5
■
W-band LO and RF frequency range
■
Low conversion loss
■
IF from DC to 100MHz
■
High LO/RF isolation
■
High LO/AM noise rejection
■
Very low IF noise
■
Low LO input power
■
Small chip size: 1.53 x 1.17 x 0.10 mm
Conversion loss (dB)
Main Features
-7,5
-10
-12,5
-15
75
75,5
76
76,5
77
77,5
78
LO Frequency (GHz)
Typical conversion characteristic
LO power = 5dBm ; IF=10MHz
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol
F_LO,F_RF
F_IF
Lc
I_LO/RF
N_IF
Parameter
LO,RF frequency range
IF frequency range
Conversion loss
LO/RF isolation
IF noise density @ 100kHz
Typ
76-77
DC-100
7.5
20
-158
Unit
GHz
MHz
dB
dB
dBm/Hz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCH21790192 - 22-Jun-00
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM2179a
Electrical Characteristics
W-band Mixer
Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical
assembly and RF configuration”
Symbol
F_LO,F_RF
F_IF
Lc
P_LO
VSWR_LO
VSWR_RF
IF_load
I_LO/RF
R_AM_LO
N_IF
Id
Parameter
LO,RF frequency range
IF frequency range
Conversion loss
LO input power
LO port VSWR (50Ω)
RF port VSWR (50Ω)
IF load impedance
LO/RF isolation
LO AM noise rejection
IF noise density @ 100kHz (1)
Supply current (2)
Min
76-77
DC-100
Typ
Max
Unit
GHz
MHz
7.5
3
5
2:1
2:1
200
17
22
27
-158
1
9
7
dB
dBm
Ω
dB
dB
dBm/Hz
mA
(1) Measured on 50Ω IF load impedance.
(2) See on chapter “Typical bias and IF configuration”
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Id
P_LO
P_RF
Top
Tstg
Supply current
Maximum peak input power overdrive at LO port (2)
Maximum peak input power overdrive at RF port (2)
Operating temperature range
Storage temperature range
Parameter
Values
3
10
10
-40 to +100
-55 to +125
Unit
mA
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCH21790192 - 22-Jun-00
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Mixer
Chip Mechanical Data and Pin References
CHM2179a
3
2
1
4
5
6
11
10
9
8
7
Unit = µm
External chip size = 1530 x 1170
Chip thickness = 100 +/- 10
HF Pads (2,5) = 68 x 118
DC/IF Pads = 100 x 100
Pin number
1,3,4,6
2
5
7
8
9
10
11
LO
RF
GND
IF
C_ext
+V
Pin name
Description
Ground : should not be bonded. If required,
please ask for more information.
LO input
RF input
Ground (optional)
Not Connected
IF output
Bias decoupling
Positive supply voltage
Ref. : DSCH21790192 - 22-Jun-00
3/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM2179a
Typical Bias and IF Configuration
W-band Mixer
Several external configurations are possible for bias and IF. The objective is to give
flexibility for the integration.
As this component is mainly dedicated to low IF use, there are several possibilities for
interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω,
however depending on the IF amplifier noise characteristic this load can be modified in order
to optimise the noise figure. A series capacitor, between IF output and the load is
recommended.
Due to high sensitivity to electrical discharges a integrated resistance is used and two ports
are available for biasing. One is for the connection of a decoupling capacitor (C_ext) and the
other one is for the supply voltage connection through an external series resistance (+V
port). However, in order to keep the compatibility with the CHM2179, only the “C_ext” port
can be used.
+V
C_bias
R_bias1
+V
1k
R_load_IF
+V
R_load_IF
C_IF
IF
C_bias
R_bias2
C_IF
C_ext
C_ext
+V
1k
IF
LO
RF
LO
RF
Recommended external bias and
IFconfiguration
Other possible configuration
(compatible with the previous version)
The recommended values for external components are:
C_bias
R_bias1
R_bias2
R_load_IF
R_bias*C >> 1/F_IF
2.9kΩ for 1mA current consumption (V = 4.5V, typical LO
power)
R_bias2 = R_bias1 + 1kΩ
From 50 to 200Ω
Notes::
1. R_bias = R_bias1 + 1kΩ when “+V” port is used, otherwize R_bias = R_bias2
2. R_bias can be adjusted if necessary; This allows to optimise the performances when
some parameters are different from recommended ones (Supply voltage, LO power …).
However maximum ratings for the current have to be taken into account.
3. A series capacitor at IF outputs is recommended for DC decoupling.
Ref. : DSCH21790192 - 22-Jun-00
4/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
W-band Mixer
Typical Assembly and RF Configuration
CHM2179a
In order to use acceptable wire bonding length, compatible with automatic
pick and place and wire bonding equipment, an external matching network is
proposed on low dielectric constant substrate.
50 Ohm
390
200
Er ~ 2.2
h = 0.127mm
630
200
390
4
5
6
11
10
9
8
7
3
2
250
150
420
390
50 Ohm
Example of integration using low dielectric constant substrate : Er=2.2,
heigh=0.127mm (dimensions are in µm)
Ref. : DSCH21790192 - 22-Jun-00
5/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
L ~ 0.25nH
Er ~ 2.2
h = 0.127mm
390
860
120 100
1
100 120
L ~ 0.25nH
320
为我们提建议&公告
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
