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BCV29, BCV49
NPN Silicon Darlington Transistors
•
For general AF applications
•
High collector current
•
High current gain
•
Complementary types: BCV28, BCV48 (PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
2
Type
BCV29
BCV49
Maximum Ratings
Parameter
Collector-emitter voltage
BCV29
BCV49
Collector-base voltage
BCV29
BCV49
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
T
S
≤
130 °C
Junction temperature
Storage temperature
1
Pb-containing
Marking
EF
EG
1=B
1=B
Pin Configuration
2=C
2=C
3=E
3=E
Package
SOT89
SOT89
Symbol
V
CEO
Value
30
60
Unit
V
V
CBO
40
80
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
10
500
800
100
200
1
150
-65 ... 150
W
°C
mA
package may be available upon special request
1
2007-03-29
BCV29, BCV49
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BCV29
I
C
= 10 mA,
I
B
= 0 , BCV49
30
60
V
(BR)CBO
-
-
-
-
-
-
-
-
-
-
µA
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0 , BCV29
I
C
= 100 µA,
I
E
= 0 , BCV49
40
80
V
(BR)EBO
I
CBO
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
10
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0 , BCV29
V
CB
= 60 V,
I
E
= 0 , BCV49
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C, BCV29
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C, BCV49
-
-
-
-
I
EBO
h
FE
-
-
-
-
-
0.1
0.1
10
10
100
nA
-
Emitter-base cutoff current
V
EB
= 4 V,
I
C
= 0
-
DC current gain
1)
I
C
= 100 µA,
V
CE
= 1 V, BCV29
I
C
= 100 µA,
V
CE
= 1 V, BCV49
I
C
= 10 mA,
V
CE
= 5 V, BCV29
I
C
= 10 mA,
V
CE
= 5 V, BCV49
I
C
= 100 mA,
V
CE
= 5 V, BCV29
I
C
= 100 mA,
V
CE
= 5 V, BCV49
I
C
= 0.5 A,
V
CE
= 5 V, BCV29
I
C
= 0.5 A,
V
CE
= 5 V, BCV49
4000
2000
10000
4000
20000
10000
4000
2000
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1.5
V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
Base emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 0.1 mA
1
Pulse
-
-
test: t < 300µs; D < 2%
3
2007-03-29
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