PD-91273E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number
Radiation Level
IRHY7230CM 100K Rads (Si)
IRHY3230CM 300K Rads (Si)
IRHY4230CM 500K Rads (Si)
IRHY8230CM 1000K Rads (Si)
R
DS(on)
0.40Ω
0.40Ω
0.40Ω
0.40Ω
IRHY7230CM
JANSR2N7381
200V, N-CHANNEL
REF:MIL-PRF-19500/614
RAD-Hard HEXFET
TECHNOLOGY
™
®
I
D
QPL Part Number
9.4A JANSR2N7381
9.4A JANSF2N7381
9.4A JANSG2N7381
9.4A JANSH2N7381
International Rectifier’s RAD-Hard HEXFET
®
technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rds(on) and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
9.4
6.0
37.6
75
0.6
±20
150
9.4
7.5
16
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in.(1.6mm) from case for 10s)
7.0 (Typical)
g
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1
05/16/06
IRHY7230CM, JANSR2N7381
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
—
2.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
—
—
0.40
0.49
4.0
—
25
250
100
-100
50
10
25
35
75
70
60
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 6.0A
Ã
VGS = 12V, ID = 9.4A
VDS = VGS, ID = 1.0mA
VDS > =15V, IDS = 6.0A
Ã
VDS= 160V ,VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 9.4A
VDS = 100V
VDD = 100V, ID = 9.4A
VGS =12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
250
63
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
9.4
37.6
1.4
460
2.4
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 9.4A, VGS = 0V
Ã
Tj = 25°C, IF = 9.4A, di/dt
≤
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY7230CM, JANSR2N7381
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (TO-257AA)
Diode Forward Voltage
Ã
100 K Rads(Si)
1
300K - 1000K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=160V, V
GS
=0V
V
GS
= 12V, I
D
= 6.0A
V
GS
= 12V, I
D
= 6.0A
V
GS
= 0V, IS = 9.4A
Min
200
2.0
—
—
—
—
—
—
Max
—
4.0
100
-100
25
0.40
0.40
1.4
Min
200
1.25
—
—
—
—
—
—
Max
—
4.5
100
-100
25
0.53
0.53
1.4
1. Part number IRHY7230CM (JANSR2N7381)
2. Part numbers IRHY3230CM (JANSF2N7381), IRHY4230CM (JANSG2N7381), and IRHY8230CM (JANSH2N7381)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
Range
(µm)
43
39
V
DS(V)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
190
100
180
100
170
100
125
50
—
—
200
150
VDS
100
50
0
0
-5
-10
VGS
-15
-20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHY7230CM, JANSR2N7381
Pre-Irradiation
100
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
10
5.0V
5.0V
1
1
10
20µs PULSE WIDTH
T
J
= 25
°
C
100
1
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 9.4A
I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 150
°
C
10
1.5
1.0
0.5
1
5
6
7
8
V DS = 50V
20µs PULSE WIDTH
9
10
11
12
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY7230CM, JANSR2N7381
2000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 9.4A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
16
C, Capacitance (pF)
1500
Ciss
12
1000
8
Coss
500
4
Crss
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
100
10us
10
100us
1ms
1
10ms
T
J
= 150
°
C
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
0.1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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