电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

200.45G42DUR

产品描述Fixed Resistor, Metal Glaze/thick Film, 4.5W, 5420000000ohm, 30000V, 0.5% +/-Tol, -5,5ppm/Cel,
产品类别无源元件    电阻器   
文件大小85KB,共1页
制造商Nicrom Electronic Inc
标准
下载文档 详细参数 全文预览

200.45G42DUR概述

Fixed Resistor, Metal Glaze/thick Film, 4.5W, 5420000000ohm, 30000V, 0.5% +/-Tol, -5,5ppm/Cel,

200.45G42DUR规格参数

参数名称属性值
是否Rohs认证符合
Objectid220526675
Reach Compliance Codecompliant
ECCN代码EAR99
构造Rectangular
JESD-609代码e3
引线直径0.8 mm
引线长度35 mm
引线间距48.26 mm
端子数量2
最高工作温度200 °C
最低工作温度-55 °C
封装高度15.24 mm
封装长度50.8 mm
封装形状RECTANGULAR PACKAGE
封装形式Radial
额定功率耗散 (P)4.5 W
电阻5420000000 Ω
电阻器类型FIXED RESISTOR
系列200(RADIAL)
技术METAL GLAZE/THICK FILM
温度系数5 ppm/°C
端子面层Tin (Sn)
容差0.5%
工作电压30000 V

文档预览

下载PDF文档
nicrom
el ect roni c
High Voltage Resistors Series 90, 100 and 200
Precision, Non-Inductive, Low TC
High Voltage Resistors Series 90, 100 and 200 combine proprietary non-
inductive resistance system and design to achieve low temperature
coefficient, low voltage coefficients, high stability and increased high
operating voltages.
C
L
Precision High Voltage Resistors Series 90, 100 and 200 are designed to
meet the demanding requirements of TWT power supplies, electron
microscopes, X-ray systems, high resolution CRT displays and
geophysical instruments. SMD Chip versions available on request.
Derating Curve
B
A
axial
Ø 0.8
L
25°C
100
RATED LOAD %
80
60
40
20
0
-50
0
50
100
150
200
R
radial
B
Ø 0.8
C
E
D
AMBIENT TEMPERATURE (°C)
Model
90.1
90.2
90.3
90.4
100.1
100.2
100.3
100.4
200.1
200.2
200.3
200.4
200.5
200.7
Wattage
0.80
1.00
1.50
2.00
1.00
1.30
2.00
3.00
1.00
2.00
3.00
4.50
6.50
9.00
Max.
Continuous
Oper. Voltage
7’000
11’000
20’000
30’000
7’000
11’000
20’000
30’000
5’000
11’000
20’000
30’000
45’000
60’000
Dimensions in millimeters
±
0.50
[Dimensions in inches
±
0.02]
L
B
20.32 [0.80]
25.40 [1.00]
38.10 [1.50]
50.80 [2.00]
20.32 [0.80]
25.40 [1.00]
38.10 [1.50]
50.80 [2.00]
12.70 [0.50]
25.40 [1.00]
38.10 [1.50]
50.80 [2.00]
76.20 [3.00]
101.60 [4.00]
3.81 [0.15]
3.81 [0.15]
3.81 [0.15]
5.08 [0.20]
5.08 [0.20]
5.08 [0.20]
5.08 [0.20]
6.35 [0.25]
5.08 [0.20]
7.62 [0.30]
12.70 [0.50]
15.24 [0.60]
15.24 [0.60]
15.24 [0.60]
C (max.)
10.00 [0.40]
10.00 [0.40]
10.00 [0.40]
10.00 [0.40]
35.00 [1.40]
35.00 [1.40]
35.00 [1.40]
35.00 [1.40]
10.00 [0.40]
35.00 [1.40]
35.00 [1.40]
35.00 [1.40]
35.00 [1.40]
35.00 [1.40]
D
17.78 [0.70]
22.86 [0.90]
35.56 [1.40]
48.26 [1.90]
17.78 [0.70]
22.86 [0.90]
35.56 [1.40]
48.26 [1.90]
10.16 [0.40]
22.86 [0.90]
35.56 [1.40]
48.26 [1.90]
73.66 [2.90]
99.06 [3.90]
E (max.)
2.00 [0.08]
2.00 [0.08]
2.00 [0.08]
2.00 [0.08]
2.50 [0.10]
2.50 [0.10]
2.50 [0.10]
2.50 [0.10]
2.00 [0.08]
2.50 [0.10]
2.50 [0.10]
2.50 [0.10]
3.00 [0.12]
3.00 [0.12]
Characteristics
Resistance Values
Tolerances
Temperature Coefficients
Operating Temperature
Insulation Resistance
Dielectric Strength
Thermal Shock
Overload
Moisture Resistance
Load Life
Encapsulation
Lead Material
from 1K to as high as 100G on all models (to 1T on request)
0.05%, 0.1%, 0.25%, 0.5%, 1%, 2%, 5%, 10% (0.05% available to 10G, 0.25% to 100G, other on request)
5, 10, 15, 25, 50 and 100 ppm/° (10 ppm/°C available to 10G, 25 ppm/° to 100G, other on request)
C
C
-55 .. +200°
C
(extended temperature range to 350° available)
C
> 10'000 M
500 Volt 25 °C 75% relative humidity
> 1'000 Volt
25 ° 75% relative humidity
C
R/R < 0.1% typ., 0.20% max.
MIL Std. 202, method 107 Cond. C
IEC 68 - 2 -14
R/R < 0.1% typ., 0.25% max.
1,5 x Pnom, 5 sec (do not exceed max. voltage)
R/R < 0.1% typ., 0.25% max.
MIL Std. 202, method 106
IEC 68 - 2 - 3
R/R < 0.1% typ., 0.25% max.
1000 hours at rated power
IEC 115 - 1
Screen Printed Silicone
Core Material
Al
2
O
3
(96%)
Tinned Copper / SMD versions available Resistor Material
Ruthenium Oxide
Voltage Coefficients of Resistance
Type
90.1
90.2
90.3
90.4
100.1
Resistance Range
1K .. 100M
100M .. 1G
1K .. 150M
150M .. 1.5G
1K .. 300M
300M .. 4G
1K .. 500M
500M .. 7G
1K .. 200M
200M .. 2.5G
VCR (- ppm/V)*
< 0.80
< 1.50
< 0.65
< 1.20
< 0.50
< 0.90
< 0.35
< 0.80
< 0.90
< 2.50
Type
100.2
100.3
100.4
200.1
200.2
Resistance Range
1K .. 250M
250M .. 3.5G
1K .. 400M
400M .. 5G
1K .. 600M
600M .. 10G
1K .. 250M
250M .. 3G
1K .. 500M
500M .. 7G
Version 5.04Cr
www.nicrom-electronic.com
VCR (- ppm/V)*
< 0.70
< 1.80
< 0.45
< 1.20
< 0.35
< 0.70
< 2.00
< 3.70
< 0.35
< 0.90
Type
200.3
200.4
200.5
200.7
Resistance Range
1K .. 1G
1G .. 10G
1K .. 1G
1G .. 20G
1K .. 1.5G
1.5G .. 30G
1K .. 2G
2G .. 40G
VCR (- ppm/V)*
< 0.20
< 0.40
< 0.10
< 0.30
< 0.07
< 0.20
< 0.05
< 0.15
* typical values, contact factory for details
© 2004 Nicrom Electronic
Via Roncaglia 22, CH-6883 Novazzano, Switzerland
Fax: ++41 91 682 99 86 Phone: ++41 91 682 67 01
info@nicrom-electronic.com
Specifications subject to changes without notice
1
ti 280049LaunchPad仿真器连接不上的问题解决办法
这次拿到的是一块TI官方出的LAUNCHXL-F280049C,板子自带XDS110仿真器,280049属于Piccolo F28004x 系列 使用F280049C需要安装高版本的CCS,因为低版本没有相关硬件库的支持。本人因此安装了C ......
fish001 DSP 与 ARM 处理器
adc采样数码管显示 真拿它没辙、、只好请教各位了
#include #include "math.h" #define Num_of_Results 32 typedef unsigned char uchar; typedef unsigned int uint; static uint results; //保存ADC转换结果的数组 float Trans ......
Qknight 单片机
语音通话系统在核磁共振设备中的运用
现目前找不到研究背景和意义啊~有哪位大大能帮帮忙么~~感激不尽啊:funk: :funk:...
echo12280809 医疗电子
首次参照例子用PB定制系统内核,却出现奇怪错误!
我刚开始接触WinCE,今天参照《WinCE.Net 程序设计》上面实例部分用PB定制系统内核。我电脑上安装了WinCE.Net 4.2 和EVC++4.0 。步骤如下: 第一步:用PB建立系统镜像。New Platform-BSP选择 ......
jiangyebula 嵌入式系统
TI 2011年MCU DAY研讨会
原谅我。本来这个贴应该发布在信息区,不过那里都没有人看 TI 2011年MCU DAY研讨会,现场可能送开发板,我们坛子都没人得到消息 http://www.lierda.com/topic/MCUDAY2011.html 没剩几天 ......
leang521 单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 4  2391  1334  164  1544  1  49  27  4  32 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved