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SMBB850D-1100-02

产品描述1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2
产品类别光电子/LED    光电   
文件大小195KB,共6页
制造商Epitex Inc
官网地址http://www.epitex.com
标准
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SMBB850D-1100-02概述

1 ELEMENT, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2

SMBB850D-1100-02规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Epitex Inc
包装说明ROHS COMPLIANT PACKAGE-2
Reach Compliance Codeunknown
配置SINGLE
最大正向电流1 A
最大正向电压1.9 V
安装特点SURFACE MOUNT
功能数量1
最高工作温度100 °C
最低工作温度-40 °C
光电设备类型INFRARED LED
标称输出功率650 mW
峰值波长850 nm
最大反向电压5 V
半导体材料AlGaAs
形状RECTANGULAR
光谱带宽3.7e-8 m
表面贴装YES
视角22 deg
Base Number Matches1

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epitex
Opto-Device & Custom LED
High Power Top LED SMBB850D-1100-02
Lead ( Pb ) Free Product – RoHS Compliant
PRELIMINARY
SMBB850D-1100-02

High Power Top LED
SMBB850D-1100-02 is an AlGaAs LED mounted on copper heat sink with a 5*5 mm
package.
These devices are available to be operated and 5000mW/sr at IFP=3A.
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2)
Package Resin
(3)
Lens
Outer
dimension (Unit: mm)
High Power Top LED
SMBB850D-1100-02
AlGaAs
1000um*1000um
1pce
850nm typ.
Silver Plated on Copper
PPA Resin
Silicone Resin
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
2500
1000
3000
5
10
120
-40 ~ +100
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition Minimum
I
F
=350mA
V
F
Forward Voltage
I
F
=1000mA
V
FP
I
FP
=3A
I
F
=1000mA
470
Radiated Power
P
O
I
FP
=3A
I
F
=1000mA
Radiant Intensity
I
E
I
FP
=3A
Peak Wavelength
P
I
F
=1000mA
840
Half Width

I
F
=1000mA
Viewing Half Angle


I
F
100mA
Rise Time
tr
I
F
=1000mA
Fall Time
tf
I
F
=1000mA
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.5
2.1
2.5
630
1900
1680
5000
850
37
±11
50
50
Maximum
1.9
2.5
Unit
V
V
mW
mW
mW/sr
mW/sr
nm
nm
deg.
ns
ns
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

 
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