SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CEFB101 Thru CEFB105
Reverse Voltage: 50 - 600 Volts
Forward Current: 1.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
SMB/DO-214AA
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.155(3.94)
0.130(3.30)
Mechanical Data
0.096(2.44)
0.083(2.13)
0.012(0.31)
0.006(0.15)
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.093 gram
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.008(0.20)
0.203(0.10)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Max. Average Forward Current
Max. Instantaneous Forward Current
at 1.0 A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25
C
Ta=100
C
Max. Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
CEFB
101
50
50
35
CEFB
102
100
100
70
CEFB
103
200
200
140
CEFB
104
400
400
280
CEFB
105
600
600
420
Unit
V
V
V
A
30
Io
V
F
Trr
I
R
R
0.875
25
1.0
1.1
35
1.25
50
A
V
nS
uA
5.0
250
13
-55 to +150
-55 to +150
JL
C/W
C
C
Tj
T
STG
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
MDS0208004C
Page 1
SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CEFB101 Thru CEFB105)
Fig. 1 - Reverse Characteristics
100
10
Fig.2 - Forward Characteristics
CEFB101-103
Reverse Current ( uA )
Tj=125 C
10
Forward current ( A )
1.0
CEFB104
1.0
Tj=75 C
0.1
CEFB105
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
Tj=25 C
0. 01
0
0.001
15
30 45 60 75 90 105 120 135 150
0 0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
35
30
Fig. 4 - Non Repetitive Forward
Surge Current
Peak Surge Forward Current ( A )
50
8.3mS Single Half Sine
Wave JEDEC methode
f=1MHz and applied
4VDC reverse voltage
Tj=25 C
Junction Capacitance (pF)
40
25
20
30
Tj=25 C
20
CEFB101-103
15
10
5
0
CEFB104-105
10
0
0.01
0.1
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Di
agram and Reverse Recovery Time Characteristics
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
+0.5A
Fig. 6 - Current Derating Curve
2.8
Average Forward Current ( A )
trr
|
|
|
|
|
|
|
|
2.4
2.0
1.6
1.2
0.8
0.4
00
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
Single Phase
Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0208004C
Page 2
微控制器 MCU
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