Technical Data
11152
Effective September 2020
STS321XXXUXXX
TVS Diode ESD suppressor
Applications
•
•
•
•
•
Cellular handsets and accessories
Microprocessor based equipment
Portable electronics
Notebooks, desktops, and servers
Portable instrumentation
Environmental compliance and general
specifications
Product features
•
•
•
•
•
•
IEC61000-4-2 (ESD)
•
•
Protects one bi-directional I/O line
Low clamping voltage
Low leakage current
Meets moisture sensitivity level (MSL) 3
Molding compound flammability rating:
UL 94V-0
Termination finish: Tin
•
Up to ±30 kV (air)
Up to ±30 kV (contact)
IEC61000-4-5 (Lightning) Up to 25 A (8/20 µs)
Pb
HF
FREE
Ordering part number
HALOGEN
•
ST S32 1 033 U 202
Family
Package (S32- SOD-323)
Number of channels (1-1)
Operating voltage (033- 3.3 V)
Bi/Uni directional (U- Uni)
Capacitance (202- 200 pF)
Pin out/functional diagram
Technical Data
11152
Effective September 2020
STS321XXXUXXX
TVS Diode ESD suppressor
Absolute maximum ratings
(+25 °C, RH=45%-75%, unless otherwise noted)
Parameter
Symbol
Value
Unit
STS321033U202
STS321050U182
STS321070U162
STS321120U901
STS321240U401
Peak pulse power dissipation on 8/20 μs waveform
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Lead soldering temperature
Operating junction temperature range
Storage temperature range
T
L
T
J
T
STG
P
pp
V
ESD
350
+/-30
+/-30
+260 (10 seconds)
-55 to +125
-55 to +150
STS321150U751
STS321360U351
350
+/-30
+/-25
+260 (10 seconds)
-55 to +125
-55 to +150
500
+/-15
+/-8
+260 (10 seconds)
-55 to +125
-55 to +150
W
kV
°C
°C
°C
Electrical characteristics
(+25 °C)
STS321033U202
Parameter
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Peak pulse current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 3.3 V
t
p
= 8/20 μs
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 25 A,
t
p
= 8/20 μs
V
RWM
= 0 V, f = 1 MHz
-
4
-
-
-
-
-
-
-
1
-
5.5
10
200
3.3
-
5
25
6.5
15
250
V
RWM
(V)
V
BR
(V)
I
R
(μA)
I
PP
(A)
V
C
(V)
V
C
(V)
C
J
(pF)
Junction capacitance
STS321050U182
Parameter
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 5.0 V
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 22 A,
t
p
= 8/20 μs
V
RWM
= 0 V, f = 1 MHz
-
6.0
-
-
-
-
-
-
5.0
-
1
V
RWM
(V)
V
BR
(V)
I
R
(μA)
V
C
(V)
V
C
(V)
C
J
(pF)
-
12
180
9.0
15
Junction capacitance
STS321070U162
Parameter
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 7 V
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 25 A,
t
p
= 8/20 μs
V
RWM
= 0 V, f = 1 MHz
-
7.5
-
-
-
-
-
8.5
0.1
11.5
15.5
165
7
9
0.5
15
20
200
V
RWM
(V)
V
BR
(V)
I
R
(μA)
V
C
(V)
V
C
(V)
C
J
(pF)
Junction capacitance
2
www.eaton.com/electronics
STS321XXXUXXX
TVS Diode ESD suppressor
STS321120U901
Parameter
Technical Data
11152
Effective September 2020
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 12 V
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 15 A,
t
p
= 8/20 μs
-
13.3
-
-
-
-
-
13.5
0.01
15
21
90
12
16
0.1
18
24
100
V
RWM
(V)
V
BR
(V)
I
R
(μA)
V
C
(V)
V
C
(V)
C
J
(pF)
Junction capacitance
V
RWM
= 0 V, f = 1 MHz
STS321150U751
Parameter
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 15 V
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 13 A,
t
p
= 8/20 μs
V
RWM
= 0 V, f = 1 MHz
-
16
-
-
-
-
-
17
0.1
20
27
75
15
19
0.2
23
30
90
V
RWM
(V)
V
BR
(V)
I
R
(μA)
V
C
(V)
V
C
(V)
C
J
(pF)
Junction capacitance
STS321240U401
Parameter
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 24 V
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 8 A,
t
p
= 8/20 μs
V
RWM
= 0 V, f = 1 MHz
-
26.4
-
-
-
-
-
28
-
-
-
40
24
32
0.1
32
45
70
V
RWM
(V)
V
BR
(V)
I
R
(μA)
V
C
(V)
V
C
(V)
C
J
(pF)
Junction capacitance
STS321360U351
Parameter
Test condition
Minimum
Typical
Maximum
Symbol (Units)
Reverse working voltage
Reverse breakdown voltage
Reverse leakage current
Clamping voltage
-
I
T
= 1 mA
V
RWM
= 36 V
I
PP
= 1 A,
t
p
= 8/20 μs
I
PP
= 6 A,
t
p
= 8/20 μs
V
RWM
= 0 V, f = 1 MHz
-
39
-
-
-
-
-
-
-
45
60
35
36
-
0.1
55
65
45
V
RWM
(V)
V
BR
(V)
I
R
(μA)
V
C
(V)
V
C
(V)
C
J
(pF)
Junction capacitance
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3
Technical Data
11152
Effective September 2020
STS321XXXUXXX
TVS Diode ESD suppressor
Mechanical parameters, pad layout- mm
Millimeters
Dimension
Minimum
Maximum
Minimum
Inches
Maximum
A
B
C
D
E
F
L
L1
H
P
P1
1.60
0.25
2.50
0.00
1.20
0.08
0.475 REF
0.25
0.00
3.00
0.80
1.80
0.35
2.75
1.00
1.40
0.15
0.40
0.10
0.063
0.010
0.098
0.000
0.047
0.003
0.019 REF
0.010
0.000
0.118
0.031
0.071
0.014
0.108
0.039
0.055
0.006
0.016
0.004
Part marking
(STS321033U202)
(STS321050U182)
(STS321070U162)
(STS321120U901)
(STS321150U751)
(STS321240U401)
(STS321360U351)
4
www.eaton.com/electronics
STS321XXXUXXX
TVS Diode ESD suppressor
Packaging information mm/inches
Drawing not to scale.
Supplied in tape and reel packaging, 3,000 parts per 7” diameter reel (EIA-481 compliant)
Technical Data
11152
Effective September 2020
www.eaton.com/electronics
5
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