DATA SHEET
MOS INTEGRATED CIRCUIT
µ
PD431000A
1M-BIT CMOS STATIC RAM
128K-WORD BY 8-BIT
Description
The
µ
PD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The
µ
PD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In
addition to this, A and B versions are low voltage operations.
The
µ
PD431000A is packed in 32-pin PLASTIC DIP, 32-pin PLASTIC SOP and 32-pin PLASTIC TSOP (I) (8
×
13.4
mm) and (8
×
20 mm).
Features
•
131,072 words by 8 bits organization
•
Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
•
Low voltage operation (A version: V
CC
= 3.0 to 5.5 V, B version: V
CC
= 2.7 to 5.5 V)
•
Operating ambient temperature: T
A
= 0 to 70
°C
•
Low V
CC
data retention: 2.0 V (MIN.)
•
Output Enable input for easy application
•
Two Chip Enable inputs: /CE1, CE2
Part number
Access time
ns (MAX.)
Operating supply Operating ambient
voltage
V
temperature
°C
0 to 70
At operating
mA (MAX.)
70
Supply current
At standby
At data retention
µ
A (MAX.)
100
20
µ
A (MAX.)
Note1
15
3
µ
PD431000A-xxL
µ
PD431000A-xxLL
µ
PD431000A-Axx
µ
PD431000A-Bxx
70
70
Note2
70, 85
4.5 to 5.5
Note2
, 100
3.0 to 5.5
2.7 to 5.5
35
30
Note3
Note4
13
11
Note5
Note6
, 100, 120, 150
Notes 1.
T
A
≤
40
°C
2.
V
CC
= 4.5 to 5.5 V
3.
70 mA (V
CC
> 3.6 V)
4.
70 mA (V
CC
> 3.3 V)
5.
20
µ
A (V
CC
> 3.6 V)
6.
20
µ
A (V
CC
> 3.3 V)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M11657EJBV0DS00 (11th edition)
Date Published April 2002 NS CP (K)
Printed in Japan
The mark
5
shows major revised points.
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