V58C2512(804/404/164)SB*I
512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE
4 BANKS X 16Mbit X 8 (804)
4 BANKS X 32Mbit X 4 (404)
4 BANKS X 8Mbit X 16 (164)
5
DDR400
Clock Cycle Time (t
CK2.5
)
Clock Cycle Time (t
CK3
)
System Frequency (f
CK max
)
6ns
5ns
200 MHz
6
DDR333
6ns
-
166 MHz
75
DDR266
7.5ns
-
133 MHz
Features
■
High speed data transfer rates with system frequency
up to 200MHz
■
Data Mask for Write Control
■
Four Banks controlled by BA0 & BA1
■
Programmable CAS Latency: 2.5, 3
■
Programmable Wrap Sequence: Sequential
or Interleave
■
Programmable Burst Length:
2, 4, 8 for Sequential Type
2, 4, 8 for Interleave Type
■
Automatic and Controlled Precharge Command
■
Power Down Mode
■
Auto Refresh and Self Refresh
■
Refresh Interval: 8192 cycles/64 ms
■
Available in 60 Ball FBGA AND 66 Pin TSOP II
■
SSTL-2 Compatible I/Os
■
Double Data Rate (DDR)
■
Bidirectional Data Strobe (DQS) for input and output
data, active on both edges
■
On-Chip DLL aligns DQ and DQs transitions with CK
transitions
■
Differential clock inputs CK and CK
■
Power Supply 2.5V ± 0.2V
■
Power Supply 2.6V ± 0.1V for DDR400
■
tRAS lockout supported
■
Concurrent auto precharge option is supported
■
Industrial Temp (TA): -40C to +85C
*Note:
(-5) Supports PC3200 module with 3-3-3 timing
(-6) Supports PC2700 module with 2.5-3-3 timing
(-75) Supports PC2100 module with 2.5-3-3 timing
Description
The V58C2512(804/404/164)SB*I is a four bank DDR
DRAM organized as 4 banks x 16Mbit x 8 (804), 4 banks x
32Mbit x 4 (404), 4 banks x 8Mbit x 16 (164). The
V58C2512(804/404/164)SB*I achieves high speed data
transfer rates by employing a chip architecture that
prefetches multiple bits and then synchronizes the output
data to a system clock.
All of the control, address, circuits are synchronized
with the positive edge of an externally supplied clock. I/O
transactions are occurring on both edges of DQS.
Operating the four memory banks in an interleaved
fashion allows random access operation to occur at a
higher rate than is possible with standard DRAMs. A se-
quential and gapless data rate is possible depending on
burst length, CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
-40°C to +85°C
Package Outline
JEDEC 66 TSOP II
60 FBGA
•
CK Cycle Time (ns)
-5
•
Power
Std.
•
-6
•
-75
•
L
•
Temperature
Mark
I
V58C2512(804/404/164)SB*I Rev.1.4 March 2007
1
微控制器 MCU
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