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RN1104CT(TPL3)

产品描述tran npn cst3 20v 50a
产品类别分立半导体    晶体管   
文件大小202KB,共8页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 选型对比 全文预览

RN1104CT(TPL3)概述

tran npn cst3 20v 50a

RN1104CT(TPL3)规格参数

参数名称属性值
包装说明,
Reach Compliance Codeunknow
最大集电极电流 (IC)0.05 A
最小直流电流增益 (hFE)120
元件数量1
极性/信道类型NPN
最大功率耗散 (Abs)0.05 W
表面贴装YES
晶体管元件材料SILICON
Base Number Matches1

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RN1101CT ~ RN1106CT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101CT, RN1102CT, RN1103CT
RN1104CT, RN1105CT, RN1106CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2101CT to RN2106CT
0.35±0.02
0.15±0.03
0.05±0.03
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
0.65±0.02
0.25±0.03
C
Type No.
RN1101CT
RN1102CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
1.BASE
2. EMITTER
3, COLLECTOR
B
R1
R2
CST3
JEDEC
JEITA
TOSHIBA
RN1103CT
RN1104CT
E
RN1105CT
RN1106CT
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101CT ro 1106CT
RN1101CT to 1106CT
RN1101CT to 1104CT
RN1105CT, 1106CT
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
20
10
5
50
50
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
Equivalent Circuit and Bias Resistor Values
0.05±0.03
2004-10
1
2014-03-01

RN1104CT(TPL3)相似产品对比

RN1104CT(TPL3) RN1106CT(TPL3) RN1103CT(TPL3) RN1105CT(TPL3) RN1102CT(TPL3)
描述 tran npn cst3 20v 50a tran npn cst3 20v 50a tran npn cst3 20v 50a tran npn cst3 20v 50a TRANS PREBIAS NPN 0.05W CST3
Reach Compliance Code unknow unknow unknown unknown unknown
最大集电极电流 (IC) 0.05 A 0.05 A 0.05 A 0.05 A 0.05 A
最小直流电流增益 (hFE) 120 120 100 120 60
元件数量 1 1 1 1 1
极性/信道类型 NPN NPN NPN NPN NPN
最大功率耗散 (Abs) 0.05 W 0.05 W 0.05 W 0.05 W 0.05 W
表面贴装 YES YES YES YES YES
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
厂商名称 - Toshiba(东芝) Toshiba(东芝) - Toshiba(东芝)

 
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