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PN3568_D27Z: 产品描述trans GP npn 60v 1.0A TO-92; 产品类别半导体分立半导体; 文件大小25KB，共4页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/; 标准

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PN3568_D27Z概述

trans GP npn 60v 1.0A TO-92

PN3568_D27Z规格参数

参数名称	属性值
Datasheets
PN3568
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package	2,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single
系列 Packaging	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1A
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	250mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 1V
Power - Max	625mW
Mounting Type	Through Hole
封装 / 箱体 Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3

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PN3568

NPN General Purpose Amplifier

• This device is designed for general purpose, medium power amplifiers

and switches requiring collector currents to 500mA.

TO-92

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings*

=25°C unless otherwise noted

Symbol

CEO

CBO

EBO

STG

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

- Continuous

Operating and Storage Junction Temperature Range

Parameter

Value

5.0

1.0

- 55 ~ 150

Units

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.

NOTES:

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics

=25°C unless otherwise noted

Symbol

Parameter

Test Condition

= 30mA, I

= 0

= 100µA, I

= 0

= 10µA, I

= 0

= 40V, I

= 0

= 40V, I

= 0, T

= 75°C

= 4V, I

= 0

= 1.0V, I

= 30mA

= 1.0V, I

= 150mA

= 150mA, I

= 15mA

= 1.0V, I

= 150mA

= 10V, f = 1.0MHz

= 0.5V, f = 1.0MHz

= 50mA, V

= 10V, f = 20MHz

3.0

Min.

5.0

Max.

Units

µA

Off Characteristics

(BR)CEO

Collector-Emitter Breakdown Voltage *

(BR)CBO

(BR)EBO

CBO

EBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

On Characteristics

DC Current Gain

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

120

0.25

1.1

Small Signal Characteristics

Output Capacitance

Input Capacitance

Small Signal Current Gain

* Pulse Test: Pulse Width

≤

300ms, Duty Cycle

≤

2.0%

Rev. B, November 2002

PN3568_D27Z相似产品对比

	PN3568_D27Z	PN3568_D26Z	PN3568_D75Z	PN3568_J05Z	PN3568_D74Z
描述	trans GP npn 60v 1.0A TO-92	trans GP npn 60v 1.0A TO-92	trans GP npn 60v 1.0A TO-92	trans GP npn 60v 1.0A TO-92	trans GP npn 60v 1.0A TO-92
Standard Package	2,000	2,000	2,000	-	-
Category	Discrete Semiconductor Products	Discrete Semiconductor Products	Discrete Semiconductor Products	-	-
Family	Transistors (BJT) - Single	Transistors (BJT) - Single	Transistors (BJT) - Single	-	-
系列 Packaging	Tape & Reel (TR)	Tape & Reel (TR)	Tape & Box (TB)	-	-
Transistor Type	NPN	NPN	NPN	-	-
Current - Collector (Ic) (Max)	1A	1A	1A	-	-
Voltage - Collector Emitter Breakdown (Max)	60V	60V	60V	-	-
Vce Saturation (Max) @ Ib, Ic	250mV @ 15mA, 150mA	250mV @ 15mA, 150mA	250mV @ 15mA, 150mA	-	-
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 1V	40 @ 150mA, 1V	40 @ 150mA, 1V	-	-
Power - Max	625mW	625mW	625mW	-	-
Mounting Type	Through Hole	Through Hole	Through Hole	-	-
封装 / 箱体 Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	-	-
Supplier Device Package	TO-92-3	TO-92-3	TO-92-3	-	-

PN3568_D27Z

PN3568_D27Z概述

PN3568_D27Z规格参数

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