RN1107CT ~ RN1109CT
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107CT, RN1108CT, RN1109CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
１
0.25±0.03
２
•
Complementary to RN2107CT to RN2109CT
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN1107CT
RN1108CT
R2
RN1109CT
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
0.35±0.02
0.15±0.03
0.65±0.02
0.05±0.03
•
Incorporating a bias resistor into a transistor reduces the number of
parts, which enable the manufacture of ever more compact
equipment and saves assembly cost.
３
B
R1
CST3
JEDEC
JEITA
TOSHIBA
1.BASE
2.EMITTER
3.COLLECTOR
―
―
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
RN1107CT to RN1109CT
RN1107CT
Emitter-base voltage
RN1108CT
RN1109CT
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107CT to RN1109CT
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
20
20
6
7
15
50
50
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
2004-10
1
2014-03-01
RN1107CT ~ RN1109CT
RN1107CT
100
COLLECTOR CURRENT IC (mA)
RN1107CT
10000
COLLECTOR CURRENT IC (μA)
COMMON EMITTER
VCE=5V
1000
Ta=100°C
25
-25
IC - VI(ON)
IC - VI(OFF)
Ta=100°C
10
25
1
-25
COMMON EMITTER
VCE=0.2V
100
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
RN1108CT
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (μA)
RN1108CT
IC - VI(OFF)
COMMON EMITTER
VCE=5V
10
Ta=100°C
1000
Ta=100°C
25
-25
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
100
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
INPUT VOLTAGE VI(OFF) (V)
RN1109CT
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
RN1109CT
IC - VI(OFF)
COMMON EMITTER
VCE=5V
COLLECTOR CURRENT IC (μA)
10
Ta=100°C
25
1
-25
COMMON EMITTER
VCE=0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
1000
Ta=100°C
25
-25
100
10
0.6
1
1.4
1.8
2.2
2.6
3
INPUT VOLTAGE VI(OFF) (V)
3
2014-03-01
RN1107CT ~ RN1109CT
RN1107CT
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
Ta=100°C
DC CURRENT GAIN hFE
hFE - IC
1000
COMMON EMITTER
IC / IB = 20
RN1107CT
VCE(sat) - IC
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
RN1108CT
100
RN1108CT
1000
Ta=100°C
hFE - IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
1000
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
25
100
-25
100
Ta=100°C
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
COMMON EMITTER
VCE = 5V
10
1
10
100
COLLECTOR CURRENT IC (mA)
RN1109CT
1000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1109CT
VCE(sat) - IC
COMMON EMITTER
IC / IB = 20
DC CURRENT GAIN hFE
Ta=100°C
25
100
-25
100
Ta=100°C
COMMON EMITTER
VCE = 5V
10
1
10
COLLECTOR CURRENT IC (mA)
100
25
-25
10
1
10
COLLECTOR CURRENT IC (mA)
100
4
2014-03-01
RN1107CT ~ RN1109CT
Type Name
Marking
Type name
1
RN1107CT
L6
2
3
Type name
RN1108CT
1
L7
2
3
Type name
RN1109CT
1
L8
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2014-03-01
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