CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±20V
MIN
55
2
-
-
-
-
-
-
-
-
-
V
DD
= 44V, I
D
≅
59A,
V
GS
= 10V, I
g(REF)
= 3mA
(Figure 6)
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 5)
-
-
-
-
-
-
Measured From the Contact
Modified MOSFET
Screw on Tab to Center of Die Symbol Showing the
Internal Devices In-
Measured From the Drain
ductances
Lead, 6mm (0.25in) From
D
Package to Center of Die
Measured From the Source
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
L
D
G
L
S
S
TYP
-
-
-
-
-
0.057
0.0065
14
100
43
70
-
-
-
4000
1300
480
7.5
MAX
-
4
25
250
100
-
0.008
-
-
-
-
170
32
74
-
-
-
-
UNITS
V
V
µA
µA
nA
V
Ω
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Breakdown Voltage Temperature
Coefficient
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
I
GSS
∆V
(BR)DSS
/ Reference to 25
o
C, I
D
= 250µA
∆T
J
r
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
S
I
D
= 59A, V
GS
= 10V (Figure 4)
V
DD
= 28V, I
D
≅
59A,
R
L
= 0.47Ω, V
GS
=
10V,
R
GS
= 2.5Ω
-
Internal Drain Inductance
L
D
-
4.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θJC
R
θJA
TO-220
TO-263 (PCB Mount, Steady State)
-
-
-
-
-
-
0.85
62
40
o
C/W
o
C/W
o
C/W
4-30
HRF3205, HRF3205S
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulsed Source to Drain Current (Note 2)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
MOSFET
Symbol Showing
The Integral
Reverse P-N
Junction Diode
D
MIN
-
-
TYP
-
-
MAX
100
(Note 1
390
UNITS
A
A
G
S
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
NOTE:
V
SD
t
rr
Q
RR
I
SD
= 59A (Note 4)
I
SD
= 59A, dI
SD
/dt = 100A/µs (Note 4)
I
SD
= 59A, dI
SD
/dt = 100A/µs (Note 4)
-
-
-
-
110
450
1.3
170
680
V
ns
nC
2. Repetitive rating; pulse width limited by maximum junction temperature (See Figure 11)
Typical Performance Curves
1000
I
D
, DRAIN TO SOURCE CURRENT (A)
V
GS
IN DECENDING ORDER
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100 4.5V
1000
I
D
, DRAIN TO SOURCE CURRENT (A)
V
GS
IN DECENDING ORDER
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100 4.5V
10
0.1
20µs PULSE WIDTH
T
C
= 25
o
C
1.0
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
20µs PULSE WIDTH
T
C
= 175
o
C
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 1. OUTPUT CHARACTERISTICS
FIGURE 2. OUTPUT CHARACTERISTICS
1000
I
D
, DRAIN TO SOURCE CURRENT(A)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
2.5
I
D
= 98A, V
GS
= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
100
T
J
= 25
o
C
1.5
10
T
J
= 175
o
C
1.0
1
3
4.5
6
V
DS
= 25V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
7.5
9
0.5
0
-80
-40
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
FIGURE 3. TRANSFER CHARACTERISTICS
FIGURE 4. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-31
HRF3205, HRF3205S
Typical Performance Curves
8000
V
GS
, GATE TO SOURCE VOLTAGE (V)
7000
C, CAPACITANCE (pF)
6000
5000
C
ISS
4000
3000
C
OSS
2000
1000
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
(Continued)
20
I
D
= 59A
V
DS
= 28V
16
V
DS
= 11V
12
V
DS
= 44V
8
4
0
0
36
72
108
144
180
Q
g
, GATE CHARGE (nC)
FIGURE 5. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
1000
I
SD
, REVERSE DRAIN CURRENT(A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
1000
100
I
D
, DRAIN CURRENT (A)
10µs
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100µs
1ms
10ms
10
T
J
= 25
o
C
10
1
0.5
1.0
1.5
2.0
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
1
1
V
DSS(MAX)
= 55V
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
FIGURE 7. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 8. FORWARD BIAS SAFE OPERATING AREA
120
1000
I
AS
, AVALANCHE CURRENT (A)
I
D
, DRAIN CURRENT (A)
90
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
60
100
STARTING T
J
= 25
o
C
30
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
175
STARTING T
J
= 150
o
C
T
C
, CASE TEMPERATURE (
o
C)
10
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
FIGURE 9. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
4-32
HRF3205, HRF3205S
Typical Performance Curves
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
(Continued)
THERMAL IMPEDANCE
Z
θ
JC
, NORMALIZED
1
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
0.01
SINGLE PULSE
10
-5
10
-4
FIGURE 11. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
DSP 与 ARM 处理器
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