MJD31C — NPN Epitaxial Silicon Transistor
November 2013
MJD31C
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
•
General-Purpose Amplifier
Low-Speed Switching Applications
Lead Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP31 and TIP31C
Description
Designed for general-purpose power and switching, such
as output or driver stages in applications.
Applications
• Switching Regulators
• Converters
• Power Amplifiers
1
D-PAK
1.Base
1
I-PAK
3.Emitter
2.Collector
Ordering Information
Part Number
MJD31CTF
MJD31CITU
Top Mark
MJD31C
MJD31C-I
Package
TO-252 3L (DPAK)
TO-251 3L (IPAK)
Packing Method
Tape and Reel
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Parameter
Value
100
100
5
3
5
1
15.00
1.56
150
- 65 to 150
Unit
V
V
V
A
A
A
W
°C
°C
Collector Dissipation (T
C
= 25°C)
Collector Dissipation (T
A
= 25°C)
Junction Temperature
Storage Temperature
© 2001 Fairchild Semiconductor Corporation
MJD31C Rev. 1.1.0
www.fairchildsemi.com
1
MJD31C — NPN Epitaxial Silicon Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
I
CEO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter Sustaining
Voltage
(1)
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
(1)
Collector-Emitter Saturation
Voltage
(1)
Base-Emitter On Voltage
(1)
Current Gain Bandwidth Product
Conditions
I
C
= 30 mA, I
B
= 0
V
CE
= 60 V, I
B
= 0
V
CE
= 100 V, V
BE
= 0
V
BE
= 5 V, I
C
= 0
V
CE
= 4 V, I
C
= 1 A
V
CE
= 4 V, I
C
= 3 A
I
C
= 3 A, I
B
= 375 mA
V
CE
= 4 A, I
C
= 3 A
V
CE
= 10 V, I
C
= 500 mA
Min.
100
Typ.
Max.
Unit
V
50
20
1
25
10
50
1.2
1.8
3
μA
μA
mA
V
V
MHz
Note:
1. Pulse test: pw
≤
300
μs,
duty cycle
≤
2%.
© 2001 Fairchild Semiconductor Corporation
MJD31C Rev. 1.1.0
www.fairchildsemi.com
2
MJD31C — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 2V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1
V
BE
(sat)
10
0.1
V
CE
(sat)
1
0.01
0.1
1
10
0.01
1E-3
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
t
C
= 10.I
B
C
ob
[pF], CAPACITANCE
100
t
R
, t
D
[
μ
s], TURN ON TIME
1
t
R
, V
CC
=30V
t
R
, V
CC
=10V
0.1
10
t
D
, V
BE
(off)=2V
1
0.1
1
10
100
0.01
0.1
1
10
V
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance
Figure 4. Turn-On Time
10
t
C
= 10.I
B
I
CP
(max)
s
0
μ
10
s
0
μ
50
t
F
,t
STG
[
μ
s], TURN OFF TIME
I
C
[A], COLLECTOR CURRENT
I
C
(max)
s
1m
1
1
t
STG
t
F
, V
CC
=30V
DC
t
F
, V
CC
(off)=10V
0.1
0.1
0.01
0.1
1
10
0.01
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn-Off Time
Figure 6. Safe Operating Area
© 2001 Fairchild Semiconductor Corporation
MJD31C Rev. 1.1.0
MJD31
MJD31C
www.fairchildsemi.com
3
MJD31C — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
(Continued)
20
P
C
[W], POWER DISSIPATION
15
10
5
0
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
Figure 7. Power Derating
© 2001 Fairchild Semiconductor Corporation
MJD31C Rev. 1.1.0
www.fairchildsemi.com
4
MJD31C — NPN Epitaxial Silicon Transistor
Physical Dimensions
TO-252 3L
Figure 7. 3-LEAD, TO-252, JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO252D03.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO252D03.pdf.
© 2001 Fairchild Semiconductor Corporation
MJD31C Rev. 1.1.0
www.fairchildsemi.com
5
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