PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
October 2008
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
C
E
TO-92
1
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
B
SOT-23
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Ratings
Units
45
75
6.0
- Continuous
500
-55 ~ +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Thermal Characteristics
T
A
=25°C unless otherwise noted
Max.
Symbol
P
D
R
θJC
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
PN100
PN100A
625
5.0
83.3
200
357
*MMBT100
*MMBT100A
350
2.8
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6”
×
1.6”
×
0.06."
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
1
www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 60V
V
CE
= 40V
V
EB
= 4V
I
C
= 100μA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V*
I
C
= 150mA, V
CE
= 5.0V *
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 1.0mA
I
C
= 200mA, I
B
= 20mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 200mA, I
B
= 20mA
V
CE
= 20V, I
C
= 20mA
V
CB
= 5.0V, f = 1.0MHz
I
C
= 100μA, V
CE
= 5.0V
R
G
= 2.0kΩ, f = 1.0KHz
100
100A
250
4.5
5.0
4.0
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
Min.
75
45
6.0
50
50
50
Max.
Units
V
V
V
nA
nA
nA
Off Characteristics
Collector-Base Breakdown Voltage
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
h
FE
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emiitter Cutoff Current
Emitter Cutoff Current
DC Current Gain
On Characteristics
450
600
350
0.2
0.4
0.85
1.0
V
V
V
V
MHz
pF
dB
dB
Small Signal Characteristics
f
T
C
obo
NF
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2.0%
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
2
www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
vs Collector Current
400
Vce = 5V
125 °C
Voltage vs Collector Current
0.4
β
= 10
0.3
25 °C
300
25 °C
200
- 40 °C
0.2
100
0.1
125 °C
- 40 °C
0
10
20 30
50
100
200 300
I
C
- COLLECTOR CURRENT (mA)
500
1
10
100
I
C
- COLLECTOR CURRENT (mA)
400
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
β
= 10
0.2
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
300
- 40 °C
Collector Current
1
0.8
0.6
0.4
V
CE
= 5V
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
- 40 °C
25 °C
125 °C
25 °C
125 °C
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 60V
100
f = 1.0 MHz
CAPACITANCE (pF)
10
Cib
Cob
1
1
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
0.1
0.1
1
10
V
ce
- COLLECTOR VOLTAGE (V)
100
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltag
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
3
www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Typical Characteristics
300
270
240
210
TIME (nS)
(Continued)
700
ts
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
180
150
120
90
60
30
0
10
td
IB1 = IB2 = Ic / 10
V
cc
= 10 V
tf
tr
20
30
50
100
200
I
C
- COLLECTOR CURRENT (mA)
300
Figure 7. Switching Times vs
Collector Current
Figure 8. Power Dissipation vs
Ambient Temperature
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
4
www.fairchildsemi.com
PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier
Package Dimension (TO92)
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
5
www.fairchildsemi.com
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