trans bipo GP pnp 50v 100ma TO-9
参数名称 | 属性值 |
Datasheets | |
BC212B | |
Product Photos | |
TO-92-3(StandardBody),TO-226_straightlead | |
Standard Package | 2,000 |
Category | Discrete Semiconductor Products |
Family | Transistors (BJT) - Single |
系列 Packaging | Bulk |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2mA, 5V |
Power - Max | 350mW |
Mounting Type | Through Hole |
封装 / 箱体 Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package | TO-92-3 |
BC212B_J35Z | BC212B_D26Z | BC212B_D27Z | |
---|---|---|---|
描述 | trans bipo GP pnp 50v 100ma TO-9 | transistor pnp 50v 100ma TO-92 | transistor pnp 50v 100ma TO-92 |
Standard Package | 2,000 | 2,000 | 2,000 |
Category | Discrete Semiconductor Products | Discrete Semiconductor Products | Discrete Semiconductor Products |
Family | Transistors (BJT) - Single | Transistors (BJT) - Single | Transistors (BJT) - Single |
系列 Packaging |
Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Transistor Type | PNP | PNP | PNP |
Current - Collector (Ic) (Max) | 100mA | 100mA | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V | 50V | 50V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA | 600mV @ 5mA, 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2mA, 5V | 60 @ 2mA, 5V | 60 @ 2mA, 5V |
Power - Max | 350mW | 350mW | 350mW |
Mounting Type | Through Hole | Through Hole | Through Hole |
封装 / 箱体 Package / Case |
TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 | TO-92-3 | TO-92-3 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved