电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BC212LB_J35Z

产品描述trans bipo GP pnp 50v 100ma TO-9
产品类别半导体    分立半导体   
文件大小44KB,共4页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准  
下载文档 详细参数 选型对比 全文预览

BC212LB_J35Z概述

trans bipo GP pnp 50v 100ma TO-9

BC212LB_J35Z规格参数

参数名称属性值
Datasheets
BC212LB
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
系列
Packaging
Bulk
Transistor TypePNP
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2mA, 5V
Power - Max350mW
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

文档预览

下载PDF文档
BC212LB
BC212LB
PNP General Purpose Amplifier
• This device is designed for general purpose amplifier application at
collector currents to 100mA.
• Sourced from process 68.
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings*
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
50
60
5
100
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
Parameter
I
C
= 2mA
I
C
= 10µA
I
E
= 10µA
V
CB
= 30V
V
EB
= 4V
V
CE
= 5V, I
C
= 10µA
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 5mA
I
C
= 100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 10V, f = 1MHz
V
CE
= 5V, I
C
= 2mA, f = 1KHz
V
CE
= 5V, I
C
= 200µA, f = 1KHz
R
G
= 2KΩ, BW = 200Hz
60
10
dB
0.6
40
60
0.6
1.4
0.72
6
V
V
V
pF
Test Condition
Min.
50
60
5
15
15
Typ.
Max.
Units
V
V
V
nA
nA
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage
BV
CBO
BV
EBO
I
CBO
I
EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
On Characteristics*
h
FE
DC Current Gain
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Small Signal Characteristics
C
ob
Output Capacitance
h
FE
NF
Small Signal Current Gain
Noise Figure
* Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002

BC212LB_J35Z相似产品对比

BC212LB_J35Z BC212LB_D74Z
描述 trans bipo GP pnp 50v 100ma TO-9 transistor pnp 50v 100ma TO-92

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2419  2126  2554  783  259  32  25  24  5  43 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved