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PN2484_D27Z

产品描述trans GP npn 60v 100ma TO-92
产品类别半导体    分立半导体   
文件大小317KB,共7页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准  
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PN2484_D27Z概述

trans GP npn 60v 100ma TO-92

PN2484_D27Z规格参数

参数名称属性值
Datasheets
PN2484, MMBT2484
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
系列
Packaging
Tape & Reel (TR)
Transistor TypeNPN
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic350mV @ 100µA, 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 2mA, 5V
Power - Max625mW
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3

文档预览

下载PDF文档
PN2484 / MMBT2484
PN2484
MMBT2484
C
E
C
B
TO-92
E
SOT-23
Mark: 1U
B
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µ to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
5.0
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2484
625
5.0
83.3
200
Max
*MMBT2484
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2000 Fairchild Semiconductor International
PN2484/MMBT2484, Rev B

PN2484_D27Z相似产品对比

PN2484_D27Z PN2484_D75Z PN2484_D74Z
描述 trans GP npn 60v 100ma TO-92 trans GP npn 60v 100ma TO-92 trans GP npn 60v 100ma TO-92
Standard Package 2,000 2,000 2,000
Category Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products
Family Transistors (BJT) - Single Transistors (BJT) - Single Transistors (BJT) - Single
系列
Packaging
Tape & Reel (TR) Tape & Box (TB) Tape & Box (TB)
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 50mA 50mA 50mA
Voltage - Collector Emitter Breakdown (Max) 60V 60V 60V
Vce Saturation (Max) @ Ib, Ic 350mV @ 100µA, 1mA 350mV @ 100µA, 1mA 350mV @ 100µA, 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2mA, 5V 150 @ 2mA, 5V 150 @ 2mA, 5V
Power - Max 625mW 625mW 625mW
Mounting Type Through Hole Through Hole Through Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

 
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