Freescale Semiconductor
Technical Data
Document Number: MRFG35010N
Rev. 6, 2/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class
AB linear base station applications.
•
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 900 mW
Power Gain — 10 dB
Efficiency — 28%
•
9 Watts P1dB @ 3.55 GHz
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35010NT1
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Symbol
R
θJC
Value
15
22.7
(2)
0.15
(2)
-5
33
- 65 to +150
175
- 20 to +85
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Value
6.6
(2)
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRFG35010NT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 1.9 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate- Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
DQ
= 180 mA)
Power Gain
(V
DD
= 12 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(V
DD
= 12 Vdc, I
DQ
= 180 mA, f = 3.55 GHz)
Drain Efficiency
(V
DD
= 12 Vdc, I
DQ
= 180 mA, P
out
= 900 mW Avg.,
f = 3.55 GHz)
Adjacent Channel Power Ratio
(V
DD
= 12 Vdc, P
out
= 900 mW Avg., I
DQ
= 180 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
G
ps
P1dB
h
D
Min
—
—
—
—
- 1.2
- 1.2
9.0
—
23
Typ
2.9
< 1.0
0.1
2.0
- 1.0
- 0.95
10
9
28
Max
—
100
1.0
15
- 0.7
- 0.7
—
—
—
Unit
Adc
µAdc
mAdc
mAdc
Vdc
Vdc
dB
W
%
ACPR
—
- 43
- 40
dBc
MRFG35010NT1
2
RF Device Data
Freescale Semiconductor
V
BIAS
V
SUPPLY
C11
C10
C9
C8
C7
C6
C5
C4
C19
C18
C17
C16
C15
C14
C13
C12
Z9
R1
Z12
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C3
C1
C2
Z6
RF
OUTPUT
Z7
Z8
Z10 Z11
Z13
Z14
Z15
Z16
C20
C22
C21
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z10
Z9
0.045″ x 0.689″ Microstrip
0.045″ x 0.089″ Microstrip
0.020″ x 0.360″ Microstrip
0.045″ x 0.029″ Microstrip
0.045″ x 0.061″ Microstrip
0.045″ x 0.055″ Microstrip
0.300″ x 0.125″ Microstrip
0.146″ x 0.070″ Microstrip
0.025″ x 0.485″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.400″ x 0.215″ Microstrip
0.025″ x 0.497″ Microstrip
0.025″ x 0.271″ Microstrip
0.025″ x 0.363″ Microstrip
0.025″ x 0.041″ Microstrip
0.045″ x 0.050″ Microstrip
0.045″ x 0.467″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
C1, C21, C22
C2
C3
C4, C19, C20
C5, C18
C6, C17
C7, C16
C8, C15
C9, C14
C10, C13
C11, C12
R1
Description
0.5 pF Chip Capacitors
0.2 pF Chip Capacitor
0.5 pF Chip Capacitor
6.8 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
µF
Chip Capacitors
39K pF Chip Capacitors
10
µF
Chip Capacitors
47
Ω
Chip Resistor
Part Number
08051J0R5BBT
06035J0R2BBT
06035J0R5BBT
08051J6R8BBT
100A100JP150X
100A101JP150X
100B101JP500X
100B102JP50X
CDR33BX104AKWS
200B393KP50X
GRM55DR61H106KA88B
D55342M07B47JOR
Manufacturer
AVX
AVX
AVX
AVX
ATC
ATC
ATC
ATC
Kemet
ATC
Kemet
Newark
MRFG35010NT1
RF Device Data
Freescale Semiconductor
3
C11
C10
C9
C14 C13
C8
C7
C6
C5
C12
C15
C16
C17
C18
C19
R1
C3
C20
C4
C1
C2
C22
C21
MRFG35010XX, Rev. 5
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010NT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
IRL, INPUT RETURN LOSS (dB)
−10
−20
−30
−40
−50
−60
0.1
1
P
out
, OUTPUT POWER (WATTS)
10
ACPR
IRL
V
DS
= 12 Vdc, I
DQ
= 180 mA
f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA
Γ
S
= 0.898é−134.03_,
Γ
L
= 0.828é−140.67_
0
−10
−20
−30
−40
−50
−60
Figure 3. W - CDMA ACPR and Input Return
Loss versus Output Power
12.5
G T , TRANSDUCER GAIN (dB)
12
V
DS
= 12 Vdc, I
DQ
= 180 mA
f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA
Γ
S
= 0.898é−134.03_,
Γ
L
= 0.828é−140.67_
PAE
11
G
T
60
50
40
30
20
10
0
10
PAE
, POWER ADDED EFFICIENCY (%)
11.5
10.5
10
9.5
0.1
1
P
out
, OUTPUT POWER (WATTS)
Figure 4. Transducer Gain and Power Added
Efficiency versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
ACPR (dBc)
MRFG35010NT1
RF Device Data
Freescale Semiconductor
5
stm32/stm8
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