Agilent AMMC-5040
20 – 45 GHz GaAs Amplifier
Data Sheet
Features
• Frequency range: 20 – 45 GHz
• High gain: 25 dB
• Gain flatness:
±
1.5 dB
• Return loss:
Input: 17 dB, Output: 11 dB
• Output power:
P
-1dB
= 21 dBm at 38 GHz
P
-3dB
= 22.5 dBm at 38 GHz
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
1720 x 760
µm
(67.7 x 29.9 mils)
±10 µm
(±0.4 mils)
100
±
10
µm
(4
±
0.4 mils)
75 x 75
µm
(3
±
0.4 mils)
Applications
• Broadband gain block
• Broadband driver amplifier
• Point-to-point radio
• LMDS
• EW
• Instrumentation
• Frequency Multiplier (X2 and X3)
Description
The AMMC-5040 is a high gain
broadband amplifier designed for
both military applications and
commercial communication
systems. This four-stage amplifier
has input and output matching
circuitry for use in 50 ohm
environments. It is fabricated
using PHEMT integrated circuit
structures that provide excep-
tional broadband performance.
The backside of this chip is both
RF and DC ground. This simpli-
fies the assembly process and
reduces assembly related perfor-
mance variations and costs. For
improved reliability and moisture
protection, the die is passivated
at the active areas. This MMIC is
a cost effective alternative to
hybrid (discrete-FET) amplifiers
that require complex tuning and
assembly process.
Absolute Maximum Ratings
[1]
Symbol
V
D1,2-3-4
V
G1,2-3-4
I
DD
P
in
T
ch
T
b
T
stg
T
max
Parameters/Conditions
Drain Voltage
Gate Voltage
Total Drain Current
CW Input Power
Operating Channel Temperature
Operating Backside Temperature
Storage Temperature
Maximum Assembly Temp (60 sec max)
Units
V
V
mA
dBm
°C
°C
°C
°C
Min.
Max.
5
-3.0
0.5
550
21
+160
-55
-65
+75
+165
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
AMMC-5040 DC Specifications/Physical Properties
[1]
Symbol
V
D1,2-3-4
I
D1
I
D2-3-4
V
G1,2-3-4
V
P
θ
ch-b
Parameters and Test Conditions
Drain Supply Operating Voltage
First Stage Drain Supply Current (V
DD
= 4.5 V, V
G1
= -0.5 V)
Total Drain Supply Current for Stages 2, 3 and 4 (V
DD
= 4.5 V, V
GG
= -0.5 V)
Gate Supply Operating Voltages (I
DD
= 300 mA)
Pinch-off Voltage (V
DD
= 4.5 V, I
DD
< 10 mA)
Thermal Resistance
[2]
(Backside Temp. T
b
= 25°C)
Units
V
mA
mA
V
V
°C/W
Min.
2
Typ.
4.5
50
225
-0.45
-1.5
49
Max.
5
Notes:
1. Measured in wafer form with T
chuck
= 25°C (except
θ
ch-bs
.)
2. Channel-to-backside Thermal Resistance (θ
ch-b
)
= 58°C/W at T
channel
(T
c
) = 150°C as measured using the liquid crystal method. Thermal Resistance at
backside temperature (T
b
) = 25°C calculated from measured data.
RF Specifications
[3,4]
(V
DD
= 4.5V, I
DD
(Q) = 300 mA, Z
0
= 50Ω)
Units
GHz
Symbol
|S
21
|
2
∆|S
21
|
2
RL
in
RL
out
P
-1dB
P
-3dB
OIP3
|S
12
|
2
Parameters and Test Conditions
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Output Power @ 1 dB Gain Compression
f = 22 GHz
Output Power @ 3 dB Gain Compression, f = 22 GHz
Output 3
rd
Order Intercept Point,
∆f
= 2 MHz, P
in
= -8 dBm, f = 22 GHz
Isolation
dB
dB
dB
dB
dBm
dBm
dBm
dB
Broadband
21 – 40
Min.
Typ.
20
25
±1.5
15
8
17
11
19.5
21
30
40
55
Narrow Band Typical Performance
21 – 24 27– 29 37– 40 40– 45
Typical
25.5
±0.2
17
10
20
21.6
29
55
25
±0.4
18
14
22.5
23.5
29
55
22.4
±0.2
21
13
21
22.5
31
55
21.3
±1.2
17
13
20
21.5
27
55
Notes:
3. Data measured in wafer form, T
chuck
= 25°C.
4. 100% on-wafer RF test is done at frequency = 21, 24, 27, 29, 37, 40 and 45 GHz, except as noted.
2
AMMC-5040 Typical Performance
(T
chuck
= 25°C)
30
35
30
26
RETURN LOSS (dB)
0
S11(dB)
S22(dB)
-5
25
GAIN (dB)
GAIN (dB)
22
20
15
10
3V
3.5V
4V
4.5V
5V
-10
18
-15
14
5
10
20
0
20
-20
25
30
35
40
45
25
30
35
40
45
-25
20
25
30
35
40
45
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Gain, V
DD
=4.5 V, I
DD
=300 mA.
Figure 2. Gain and Drain Voltage,
I
DD
=300 mA.
35
30
25
GAIN (dB)
Figure 3. Input and Output Return Loss,
V
DD
=4.5V, I
DD
=300 mA.
0
-5
-10
-15
-20
-25
-30
20
3.5V
4V
4.5V
5V
30
25
20
GAIN (dB)
20
15
10
5
0
20
150mA
200mA
250mA
300mA
350mA
400mA
15
10
5
0
20
3.5V
4V
4.5V
5V
25
30
35
40
45
INPUT RETURN LOSS (dB)
25
30
35
40
45
25
30
35
40
45
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Gain and Drain Voltage,
I
DD
=350 mA.
Figure 5. Gain and Drain Voltage, I
DD
=4.5V.
Figure 6. Input Return Loss and Drain Voltage,
I
DD
=350 mA.
3
AMMC-5040 Typical Performance
(T
chuck
= 25°C)
0
3.5V
4V
4.5V
5V
25
26
OUTPUT RETURN LOSS (dB)
24
P1dB & P3dB (dBm)
100mA
200mA
300mA
350mA
-5
20
P1dB (dBm)
22
-10
15
20
-15
10
18
P
-1dB
P
-3dB
-20
20
25
30
35
40
45
5
20
25
30
35
40
45
16
20
25
30
35
40
45
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. Output Return Loss and Drain
Voltage, I
DD
=350 mA.
15
Figure 8. Output Power (P
-1dB
) and Drain
Current, V
DD
=4.5V.
25
Figure 9. Output Power at P
-1dB
and P
-3dB,
V
DD
=4.5V, I
DD
=300 mA.
35
13
23
30
NF (dB)
21
IP3 (dBm)
3.5V
4V
4.5V
5V
11
P1dB (dBm)
25
9
19
20
7
17
15
5
20
25
30
35
40
45
15
20
25
30
35
40
45
10
20
25
30
35
40
45
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 10. Noise Figure, V
DD
=4.5V,
I
DD
=300 mA.
Figure 11. Output Power (P
-1dB
) and Drain
Voltage, I
DD
=300 mA.
Figure 12. Output 3
rd
Order Intercept Point,
V
DD
=4.5V, I
DD
=300 mA.
4
AMMC-5040 RF Performance for Frequency Multiplier Applications
Typical Performance as a X2 Frequency Multiplier, Input Power Optimized for Conversion Gain
[1]
Input Frequency
(GHz)
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Input Power
(dBm)
6
6
6.5
6.5
7.5
7.5
7.5
7.5
7
7
3
5
5
5
Output Frequency
(GHz)
20
22
24
26
28
30
32
34
36
38
40
42
44
46
Output Power
(dBm)
18.2
18.9
20.5
20.8
20.0
19.6
18.0
16.0
11.7
7.1
7.0
10.7
11.3
11.7
Conversion Gain
(dB)
12.2
12.9
14.0
14.3
12.4
12.1
10.5
8.5
4.7
0.1
4.0
5.7
6.3
6.7
Typical Performance as a X2 Frequency Multiplier, Input Power Optimized for Output Power
[1]
Input Frequency
(GHz)
10
11
12
13
14
15
16
Input Power
(dBm)
10
10
10
9.5
9.5
9.5
9.5
Output Frequency
(GHz)
20
22
24
26
28
30
32
Output Power
(dBm)
20.2
20.9
22.0
22.2
20.8
20.6
19.0
Conversion Gain
(dB)
10.2
10.9
12.0
12.7
11.3
11.1
9.5
Typical Performance as a X3 Frequency Multiplier
[1]
Input Frequency
(GHz)
7
8
9
10
11
12
13
14
Input Power
(dBm)
14.3
14.2
15.1
15.9
15.8
15.8
15.7
15.6
Output Frequency
(GHz)
21
24
27
30
33
36
39
42
Output Power
(dBm)
19.6
20.6
20.0
18.6
16.0
14.7
12.9
10.0
Conversion Gain
(dB)
5.3
6.4
4.9
2.6
0.2
-1.0
-2.7
-5.5
Note:
1. T = 25°C. Refer to “Multiplier Biasing and Operation” section for bias conditions for operation as a multiplier.
5
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