BYT42D-TR: 产品描述Rectifier Diode, 1 Phase, 1 Element, 1.25A, 200V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN; 产品类别分立半导体二极管; 文件大小101KB，共6页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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BYT42D-TR概述

Rectifier Diode, 1 Phase, 1 Element, 1.25A, 200V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN

BYT42D-TR规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Vishay(威世)
包装说明	E-LALF-W2
针数	2
Reach Compliance Code	unknown
ECCN代码	EAR99
应用	FAST SOFT RECOVERY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	E-LALF-W2
JESD-609代码	e2
湿度敏感等级	1
最大非重复峰值正向电流	30 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-55 °C
最大输出电流	1.25 A
封装主体材料	GLASS
封装形状	ELLIPTICAL
封装形式	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
最大重复峰值反向电压	200 V
最大反向恢复时间	0.15 µs
表面贴装	NO
端子面层	TIN SILVER
端子形式	WIRE
端子位置	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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BYT42

Vishay

Semiconductors

Fast Soft Recovery Rectifier

Features

Miniature axial leaded

Glass passivated

Hermetically sealed glass envelope

Low reverse current

High reverse voltage

Applications

TV and monitor

SMPS

Electronic ballast

95 10526

Absolute Maximum Ratings

= 25

Parameter

Reverse voltage=

Repetitive peak reverse voltage

Test Conditions

Type

BYT42A

BYT42B

BYT42D

BYT42G

BYT42J

BYT42K

BYT42M

Symbol

RRM

Value

100

200

400

600

800

1000

1.25

–55...+175

Unit

Peak forward surge current

Average forward current

Junction and storage

temperature range

Non repetitive reverse

avalanche energy

=8.3 ms, half sinewave

Lead length l = 10 mm,

= 25

FSM

FAV

stg

(BR)R

=0.4A

Maximum Thermal Resistance

= 25

Parameter

Junction ambient

Test Conditions

Lead length l = 10 mm, T

= constant

on PC board with spacing 25mm

Symbol

thJA

Value

110

Unit

K/W

Document Number 86025

Rev. 4, 10-Aug-00

www.vishay.com

1 (5)

BYT42

Vishay

Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of

Vishay Semiconductor GmbH

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH

has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH

can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

Document Number 86025

Rev. 4, 10-Aug-00

www.vishay.com

5 (5)

BYT42D-TR相似产品对比

	BYT42D-TR	BYT42B-TR	BYT42G-TR	BYT42A-TR	BYT42M-TR	BYT42K-TR	BYT42J-TR
描述	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 200V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 100V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 400V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 50V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 1000V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 800V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN	Rectifier Diode, 1 Phase, 1 Element, 1.25A, 600V V(RRM), Silicon, HERMETIC SEALED, MINIATURE, GLASS, DOT30B, 2 PIN
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合
包装说明	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
针数	2	2	2	2	2	2	2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
应用	FAST SOFT RECOVERY	FAST SOFT RECOVERY	FAST SOFT RECOVERY	FAST SOFT RECOVERY	FAST SOFT RECOVERY	FAST SOFT RECOVERY	FAST SOFT RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2	E-LALF-W2
JESD-609代码	e2	e2	e2	e2	e2	e2	e2
湿度敏感等级	1	1	1	1	1	1	1
最大非重复峰值正向电流	30 A	30 A	30 A	30 A	30 A	30 A	30 A
元件数量	1	1	1	1	1	1	1
相数	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	1.25 A	1.25 A	1.25 A	1.25 A	1.25 A	1.25 A	1.25 A
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	200 V	100 V	400 V	50 V	1000 V	800 V	600 V
最大反向恢复时间	0.15 µs	0.15 µs	0.15 µs	0.15 µs	0.2 µs	0.2 µs	0.15 µs
表面贴装	NO	NO	NO	NO	NO	NO	NO
端子面层	TIN SILVER	TIN SILVER	TIN SILVER	TIN SILVER	TIN SILVER	TIN SILVER	TIN SILVER
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
厂商名称	Vishay(威世)	-	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)

BYT42D-TR

BYT42D-TR在线购买

BYT42D-TR概述

BYT42D-TR规格参数

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