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PN4917_D26Z

产品描述trans GP pnp 30v 200ma TO-92
产品类别半导体    分立半导体   
文件大小296KB,共7页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准  
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PN4917_D26Z概述

trans GP pnp 30v 200ma TO-92

PN4917_D26Z规格参数

参数名称属性值
Datasheets
PN4917
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
系列
Packaging
Tape & Reel (TR)
Transistor TypePNP
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)25nA
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 10mA, 1V
Power - Max625mW
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3

文档预览

下载PDF文档
PN4917
Discrete POWER & Signal
Technologies
PN4917
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
30
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN4917
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

PN4917_D26Z相似产品对比

PN4917_D26Z PN4917_D27Z PN4917_D74Z
描述 trans GP pnp 30v 200ma TO-92 trans GP pnp 30v 200ma TO-92 trans GP pnp 30v 200ma TO-92
Standard Package 2,000 2,000 -
Category Discrete Semiconductor Products Discrete Semiconductor Products -
Family Transistors (BJT) - Single Transistors (BJT) - Single -
系列
Packaging
Tape & Reel (TR) Tape & Reel (TR) -
Transistor Type PNP PNP -
Current - Collector (Ic) (Max) 200mA 200mA -
Voltage - Collector Emitter Breakdown (Max) 30V 30V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) 25nA 25nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1V 150 @ 10mA, 1V -
Power - Max 625mW 625mW -
Mounting Type Through Hole Through Hole -
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads -
Supplier Device Package TO-92-3 TO-92-3 -
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