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JANTXV1N4575AUR-1

产品描述Zener Diode, 6.4V V(Z), 5%, 0.4W,
产品类别分立半导体    二极管   
文件大小169KB,共21页
制造商Aeroflex Metelics / Hi-Rel Components
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JANTXV1N4575AUR-1概述

Zener Diode, 6.4V V(Z), 5%, 0.4W,

JANTXV1N4575AUR-1规格参数

参数名称属性值
Objectid110399385
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗25 Ω
元件数量1
最高工作温度175 °C
最大功率耗散0.4 W
标称参考电压6.4 V
表面贴装YES
最大电压容差5%
工作测试电流4 mA

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The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 4 May 2009.
INCH-POUND
MIL-PRF-19500/452J
4 February 2009
SUPERSEDING
MIL-PRF-19500/452H
26 March 2008
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED,
VOLTAGE-REFERENCE, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1
THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED
(TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H,
JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias
current, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each
unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided
for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA),
figure 4 (JANHCB and JANKCB), and figure 5 (JANHCC and JANKCC).
1.3 Maximum ratings. Unless otherwise specified TA = +25C.
PT
TSTG and TJ
C
-55 to +175
IZM (1)
Power derating
above TA = +25C
mW/C
3.33
mW
500
mA dc
70
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper IZ as specified in 1.4 herein.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961

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