2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
2Mb SYNCBURST
™
SRAM
FEATURES
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
DD
)
• Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL
WRITE
• Three chip enables for simple depth expansion and
address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down
• 100-pin TQFP package
• Low capacitive bus loading
• x18, x32, and x36 versions available
MT58L128L18F, MT58L64L32F,
MT58L64L36F; MT58L128V18F,
MT58L64V32F, MT58L64V36F
3.3V V
DD
, 3.3V or 2.5V I/O, Flow-Through
100-Pin TQFP**
**JEDEC-standard MS-026 BHA (LQFP).
GENERAL DESCRIPTION
The Micron
®
SyncBurst
™
SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
Micron’s 2Mb SyncBurst SRAMs integrate a 128K x
18, 64K x 32, or 64K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock
input (CLK). The synchronous inputs include all ad-
dresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
(CE2, CE2#), burst control inputs (ADSC#, ADSP#,
ADV#), byte write enables (BWx#) and global write
(GW#).
Asynchronous inputs include the output enable
(OE#), snooze enable (ZZ) and clock (CLK). There is also
a burst mode pin (MODE) that selects between inter-
leaved and linear burst modes. The data-out (Q), en-
abled by OE#, is also asynchronous. WRITE cycles can
be from one to two bytes wide (x18) or from one to four
bytes wide (x32/x36), as controlled by the write control
inputs.
Burst operation can be initiated with either address
status processor (ADSP#) or address status controller
(ADSC#) input pins. Subsequent burst addresses can be
internally generated as controlled by the burst advance
pin (ADV#).
OPTIONS
• Timing (Access/Cycle/MHz)
6.8ns/8.0ns/125 MHz
7.5ns/8.8ns/113 MHz
8.5ns/10ns/100 MHz
10ns/15ns/66 MHz
• Configurations
3.3V I/O
128K x 18
64K x 32
64K x 36
2.5V I/O
128K x 18
64K x 32
64K x 36
• Packages
100-pin TQFP
• Operating Temperature Range
Commercial (0°C to +70°C)
Part Number Example:
MARKING
-6.8
-7.5
-8.5
-10
MT58L128L18F
MT58L64L32F
MT58L64L36F
MT58L128V18F
MT58L64V32F
MT58L64V36F
T
None
MT58L64L36FT-8.5
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
FUNCTIONAL BLOCK DIAGRAM
128K x 18
17
SA0, SA1, SA
MODE
ADV#
CLK
ADDRESS
REGISTER
17
15
17
2
SA0-SA1
SA1'
BINARY Q1
COUNTER AND
LOGIC
CLR
Q0
SA0'
ADSC#
ADSP#
BYTE “b”
WRITE REGISTER
9
BYTE “b”
WRITE DRIVER
9
128K x 9 x 2
MEMORY
ARRAY
9
18
SENSE 18
AMPS
OUTPUT
BUFFERS
18
BWb#
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
9
BYTE “a”
WRITE DRIVER
DQs
DQPa
DQPb
ENABLE
REGISTER
18
INPUT
REGISTERS
2
FUNCTIONAL BLOCK DIAGRAM
64K x 32/36
16
SA0, SA1, SA
MODE
ADV#
CLK
BINARY Q1
SA1'
COUNTER
AND LOGIC
Q0
CLR
SA0'
ADDRESS
REGISTER
16
SA0-SA1
14
16
ADSC#
ADSP#
BWd#
BYTE “d”
WRITE REGISTER
9
BYTE “d”
WRITE DRIVER
9
BWc#
BYTE “c”
WRITE REGISTER
9
BYTE “c”
WRITE DRIVER
9
64K x 8 x 4
(x32)
64K x 9 x 4
(x36)
36
SENSE
AMPS
36
OUTPUT
BUFFERS
36
DQs
DQPa
DQPb
DQPc
DQPd
BWb#
BYTE “b”
WRITE REGISTER
9
BYTE “b”
WRITE DRIVER
9
MEMORY
ARRAY
BWa#
BWE#
GW#
CE#
CE2
CE2#
OE#
BYTE “a”
WRITE REGISTER
9
BYTE “a”
WRITE DRIVER
9
36
ENABLE
REGISTER
4
INPUT
REGISTERS
NOTE:
Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for
detailed information.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
GENERAL DESCRIPTION (continued)
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written.
During WRITE cycles on the x18 device, BWa#
controls DQa pins and DQPa; BWb# controls DQb pins
and DQPb. During WRITE cycles on the x32 and x36
devices, BWa# controls DQa pins and DQPa; BWb#
controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. GW#
LOW causes all bytes to be written. Parity bits are only
available on the x18 and x36 versions.
Micron’s 2Mb SyncBurst SRAMs operate from a
+3.3V V
DD
power supply, and all inputs and outputs are
TTL-compatible. Users can choose either a 3.3V or 2.5V
I/O version. The device is ideally suited for 486,
Pentium
®
, 680X0, and PowerPC systems and systems
that benefit from a very wide data bus. The device is also
ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-wide
applications.
Please
refer
to
Micron’s
Web
site
(www.micronsemi.com/datasheets/syncds.html) for
the latest data sheet.
TQFP PIN ASSIGNMENT TABLE
PIN #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
x32/x36
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
NC
DQc
NC
DQc
DQb
DQc
DQb
DQc
V
SS
V
DD
Q
DQb
DQc
DQb
DQc
V
SS
V
DD
NC
V
SS
DQb
DQd
DQb
DQd
V
DD
Q
V
SS
DQb
DQd
DQb
DQd
DQPb
DQd
NC
DQd
x18
NC
NC
NC
PIN #
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
x18
x32/x36
V
SS
V
DD
Q
NC
NC
NC
DQd
DQd
NC/DQPd**
MODE
SA
SA
SA
SA
SA1
SA0
DNU
DNU
V
SS
V
DD
DNU
DNU
SA
SA
SA
SA
SA
SA
NC/SA*
PIN #
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
x32/x36
NC/DQPa**
DQa
DQa
V
DD
Q
V
SS
NC
DQa
NC
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
ZZ
V
DD
NC
V
SS
DQa
DQb
DQa
DQb
V
DD
Q
V
SS
DQa
DQb
DQa
DQb
DQPa
DQb
NC
DQb
x18
NC
NC
NC
PIN #
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
x18
x32/x36
V
SS
V
DD
Q
DQb
DQb
NC/DQPb**
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
BWc#
NC
BWd#
CE2
CE#
SA
SA
NC
NC
SA
*Pin 50 is reserved for address expansion.
**No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
PIN ASSIGNMENT (Top View)
100-Pin TQFP
SA
NC
NC
V
DD
Q
V
SS
NC
DQPa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
NC
NC
V
SS
V
DD
Q
NC
NC
NC
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
NC
NC
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
x18
NC/SA*
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
SA
SA
ADV#
ADSP#
ADSC#
OE#
BWE#
GW#
CLK
V
SS
V
DD
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
SA
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
50
81
49
82
48
83
47
84
46
85
45
86
44
87
43
88
42
89
41
90
40
91
39
92
38
93
37
94
36
95
35
96
34
97
33
98
32
99
31
100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NC/DQPb**
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
NC
V
DD
ZZ
DQa
DQa
V
DD
Q
V
SS
DQa
DQa
DQa
DQa
V
SS
V
DD
Q
DQa
DQa
NC/DQPa**
NC
NC
NC
V
DD
Q
V
SS
NC
NC
DQb
DQb
V
SS
V
DD
Q
DQb
DQb
V
SS
V
DD
NC
V
SS
DQb
DQb
V
DD
Q
V
SS
DQb
DQb
DQPb
NC
V
SS
V
DD
Q
NC
NC
NC
x32/x36
NC/SA*
SA
SA
SA
SA
SA
SA
DNU
DNU
V
DD
V
SS
DNU
DNU
SA0
SA1
SA
SA
SA
SA
MODE
*Pin 50 is reserved for address expansion.
**No Connect (NC) is used on the x32 version. Parity (DQPx) is used on the x36 version.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
NC/DQPc**
DQc
DQc
V
DD
Q
V
SS
DQc
DQc
DQc
DQc
V
SS
V
DD
Q
DQc
DQc
V
SS
V
DD
NC
V
SS
DQd
DQd
V
DD
Q
V
SS
DQd
DQd
DQd
DQd
V
SS
V
DD
Q
DQd
DQd
NC/DQPd**
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
FLOW-THROUGH SYNCBURST SRAM
TQFP PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
SA0
SA1
SA
TYPE
Input
DESCRIPTION
Synchronous Address Inputs: These inputs are registered and must
meet the setup and hold times around the rising edge of CLK.
37
37
36
36
32-35, 44-49, 32-35, 44-49,
80-82, 99,
81, 82, 99,
100
100
93
94
–
–
93
94
95
96
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
individual bytes to be written and must meet the setup and hold
times around the rising edge of CLK. A byte write enable is LOW
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa pins and DQPa; BWb# controls DQb pins and
DQPb. For the x32 and x36 versions, BWa# controls DQa pins and
DQPa; BWb# controls DQb pins and DQPb; BWc# controls DQc pins
and DQPc; BWd# controls DQd pins and DQPd. Parity is only
available on the x18 and x36 versions.
Byte Write Enable: This active LOW input permits BYTE WRITE
operations and must meet the setup and hold times around the
rising edge of CLK.
Global Write: This active LOW input allows a full 18-, 32-, or 36-bit
WRITE to occur independent of the BWE# and BWx# lines and must
meet the setup and hold times around the rising edge of CLK.
Clock: This signal registers the address, data, chip enable, byte
write enables and burst control inputs on its rising edge. All
synchronous inputs must meet setup and hold times around the
clock’s rising edge.
Synchronous Chip Enable: This active LOW input is used to enable
the device and conditions the internal use of ADSP#. CE# is sampled
only when a new external address is loaded.
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
Output Enable: This active LOW, asynchronous input enables the
data I/O output drivers.
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after
the external address is loaded. A HIGH on this pin effectively causes
wait states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
Synchronous Address Status Processor: This active LOW input
interrupts any ongoing burst, causing a new external address to be
registered. A READ is performed using the new address,
independent of the byte write enables and ADSC#, but dependent
upon CE#, CE2 and CE2#. ADSP# is ignored if CE# is HIGH. Power-
down state is entered if CE2 is LOW or CE2# is HIGH.
87
87
BWE#
Input
88
88
GW#
Input
89
89
CLK
Input
98
98
CE#
Input
92
92
CE2#
Input
97
97
CE2
Input
86
83
86
83
OE#
ADV#
Input
Input
84
84
ADSP#
Input
(continued on next page)
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_2.p65 – Rev. 6/01
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
