tm
TE
CH
T14M1024A
SRAM
FEATURES
•
Fast Address Access Times : 10/12/15ns
•
Single 5V +10% power supply
•
Low Power Consumption : 110/105/100mA
•
TTL I/O compatible
•
2.0V data retention mode
•
Automatic power-down when deselected
•
Available packages :
32-pin 300 mil SOJ & 32-pin TSOP-I
•
Industry Standard Pin Assignment
128K X 8 HIGH SPEED
CMOS STATIC RAM
GENERAL DESCRIPTION
The T14M1024A is a one-megabit density, fast
static random access memory organized as 131,072
words by 8 bits. It is designed for use in high
performance
memory applications such as main
memory storage and high speed communication
buffers. Fabricated using high performance CMOS
technology, access times down to 10ns are achieved.
Memory expansion by banking is easily
accomplished using the chip enable pins
CE1
and
CE2. This device is packaged in a standard 32-pin
300 mil SOJ and 32-pin TSOP-I.
BLOCK DIAGRAM
PIN CONFIGURATION
NC
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
Vcc
A11
CE2
WE
A12
A13
A14
A15
OE
A16
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Vcc
Vss
A0
.
.
.
.
A16
CE1
CE2
DECODER
CORE
ARRAY
DATA I/O
WE
OE
I/O0
.
.
.
I/O7
SOJ
26
25
24
23
22
21
20
19
18
17
PIN DESCRIPTION
SYMBOL
A0 - A16
I/O0 - I/O7
CE1,CE2
WE
OE
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Select Inputs
Write Enable
Output Enable
Power Supply
Ground
A15
A14
A13
A12
WE
CE2
A11
VCC
NC
A10
A9
A8
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
TSOP-I
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A16
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
PART NUMBER EXAMPLES
PACKAGE
SPEED
T14M1024A-10J SOJ 300mil
10ns
T14M1024A-10P TSOP-I 8x13.4mm 10ns
T14M1024A-10H TSOP-I 8x20mm 10ns
P. 1
Publication Date: SEP. 2002
Revision:E
TM Technology Inc. reserves the right
to change products or specifications without notice.
tm
TE
CH
T14M1024A
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power Supply Voltage
Input Voltage
Output Voltage
Operating Temperatrue
Storage Temperature
Power Dissipation
Short Circuit Output Current
SYM
Vcc
V
IN
V
OUT
T
OPR
T
STG
P
D
I
OUT
RATING
-0.5 to 7.0
-0.5 to Vcc+0.5
-0.5 to Vcc+0.5
0 to +70
-55 to +150
1.0
50
UNIT
V
V
V
°C
°C
W
mA
TRUTH TABLE
CE1
H
CE2
X
L
H
H
H
OE
X
WE
X
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O0- I/O7
High-Z
High-Z
High-Z
Data Out
Data In
Vcc
X
L
L
L
X
H
L
X
X
H
H
L
I
SB,
I
SB1
I
SB,
I
SB1
Icc
Icc
Icc
OPERATING CHARACTERISTICS
(Vcc = 5V
±
10%, Ta = 0 to 70°C)
PARAMETER
Power Supply Voltage
Input Low Voltage
Input High Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Power
Supply Current
SYM.
Vcc
V
IL
V
IH
I
LI
I
LO
TEST CONDITIONS
MIN.
4.5
-0.5
2.2
-
-
-
2.4
-
-
-
-
-
MAX.
5.5
0.8
Vcc+0.5
5
5
0.4
-
110
105
100
25
5
UNIT
V
V
V
uA
uA
V
V
mA
mA
mA
mA
mA
V
IN
=Vss to Vcc
V
IN
=Vss to Vcc ,
CE1
= V
IH
or CE2
= V
IL
or
OE
= V
IH
or
WE
= V
IL
I
OL
= 4.0 mA
I
OH
=-2.0 mA
CE1
=
V
IL
V
OL
V
OH
Icc
10ns
I
SB
I
SB1
12ns
IO = 0mA
15ns
CE1
=
V
IH
, CE2 = V
IL
, IO = 0mA
Vcc = max;
CE1
≥
Vcc-0.2V or CE2
≤
Vss+0.2V; f=0mhz; IO = 0mA
CE2 = V
IH
;f=max
Note:
Typical characteristics are at Vcc = 5V, Ta = 25°C
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 2
Publication Date: SEP. 2002
Revision:E
tm
TE
CH
T14M1024A
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply Voltage
Input Voltage, low
Input Voltage, high
Ambient Temperature
SYM
Vcc
MIN
Typ-10%
-0.3
2.2
0
TYP
5
-
-
-
MAX
Typ+10%
0.8
Vcc+0.3
70
UNIT
V
V
V
°C
V
IL
V
IH
T
A
CAPACITANCE
PARAMETER
Input Capacitance
Input/ Output Capacitance
SYMBOL
C
IN
C
I/O
CONDITION
V
IN
= 0V
V
OUT
= 0V
MAX.
6
8
UNIT
pF
pF
Note:
These parameters are sampled but not 100% tested.
AC TEST CONDITIONS
PARAMETER
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Level
Output Load
CONDITIONS
0V to 3V
3.0 ns
1.5V
C
L
=30pF,
I
OH
/
I
OL
= -2mA/4mA
AC TEST LOADS AND WAVEFORM
5V
RL=50 ohm
OUTPUT
Zo=50 ohm
Vt=1.5V
30pF
OUTPUT
5pF
Including
Jig and
Scope
R2
255 ohm
R1 480 ohm
(For T
CLZ
, T
OLZ
, T
CHZ
, T
OHZ
, T
WHZ
, T
OW
)
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 3
Publication Date: SEP. 2002
Revision:E
tm
TE
CH
T14M1024A
AC CHARACTERISTICS
(
Vcc
=5V
±
10%, Vss = 0V, Ta = 0 to 70°C)
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable to Output Valid
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
SYM.
T14M1024A-10 T14M1024A-12 T14M1024A-15
UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
10
-
12
-
15
-
ns
-
-
-
3
0
-
-
3
10
10
6
-
-
5
5
-
-
-
-
3
0
-
-
3
12
12
7
-
-
6
6
-
-
-
-
3
0
-
-
3
15
15
7
-
-
7
7
-
ns
ns
ns
ns
ns
ns
ns
ns
t
RC
t
AA
t
ACS
t
AOE
t
CLZ*
t
OLZ*
t
CHZ*
t
OHZ*
t
OH
* These parameters are sampled but not 100% tested.
(2)WRITE CYCLE
PARAMETER
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
SYM.
T14M1024A-10 T14M1024A-12 T14M1024A-15
UNIT
MIN. MAX. MIN. MAX. MIN. MAX.
10
-
12
-
15
-
ns
8
8
0
8
0
6
0
-
-
0
-
-
-
-
-
-
-
5
5
-
10
10
0
10
0
8
0
-
-
0
-
-
-
-
-
-
-
6
6
-
11
11
0
11
0
8
0
-
-
0
-
-
-
-
-
-
-
6
7
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ*
t
OHZ*
t
OW
* These parameters are sampled but not 100% tested.
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 4
Publication Date: SEP. 2002
Revision:E
tm
(Address
TE
CH
T14M1024A
TIMING WAVEFORMS
READ CYCLE 1
Controlled)
tR C
A d d re s s
tA A
tO H
tO H
D O U T
READ CYCLE 2
(Chip Enable
Controlled)
tRC
Address
tA A
OE
t AOE
tOLZ
tOH
C E
t ACS
tCLZ
tOHZ
tCHZ
DOUT
DON' T CARE
UNDEFINED
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 5
Publication Date: SEP. 2002
Revision:E
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