SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
BCW61A
BA
BCW61B
BB
BCW61C
BC
BCW61D
BD
COMPLEMENTARY TYPE
BCW61AR
BCW61BR
BCW61CR
BCW61DR
BCW60
CA
CB
CC
CD
BCW61
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
TOT
T
j
:T
stg
VALUE
-32
-32
-5
-200
-50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A
Min.
h
11e
h
12e
h
21e
h
22e
1.6
Typ.
2.7
1.5
200
18
30
Max.
4.5
h
FE
Group B
Min.
2.5
Typ.
3.6
2
260
24
50
Max.
6.0
h
FE
GroupC
Min.
3.2
Typ.
4.5
2
330
30
+V
BB
h
FE
Group D
Min.
4.5
Typ.
7.5
3
520
60
V
CC
(-10V)
Max.
8.5
Max.
12
k
Ω
10
-4
100
µ
S
50
R
2
R
L
1
µ
sec
-10V
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
Ω
50
Ω
R
1
BAY 63
t
r
< 5nsec
Z
in
≥
100k
Ω
Oscilloscope
PAGE NO
S
W
BCW61
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter Cut-off
Current
Emitter-Base Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base - Emitter Voltage
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
-0.60
-0.68
-0.6
-0.12
-0.25
-0.70
-0.80
-0.55
-0.65
-0.72
140
170
200
250
270
350
340
500
180
11
6
2
6
MIN.
-32
-5
-20
-20
-20
-0.25
-0.55
-0.85
-1.05
-0.75
TYP.
MAX.
UNIT
V
V
nA
nA
V
V
V
V
V
V
V
CONDITIONS.
I
CEO
=-2mA
I
EBO
=-1
µ
A
V
CES
=-32V
V
CES
=-32V ,T
amb
=150
o
C
V
EBO
=-4V
I
C
=-10mA,I
B
= -0.25mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-10mA, I
B
=-0.25mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
I
C
=-10
µ
A, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
MHz
pF
pF
dB
I
C
=10mA, V
CE
= -5V
f = 100MHz
V
EBO
= -0.5V,f =1MHz
V
CBO
= -10V, f =1MHz
I
C
=- 0.2mA, V
CE
=- 5V
R
G
=2K
Ω,
f=1KHz
∆
f=200Hz
µ
A
Static
Forward
Current
Transfer
Ratio
BCW61A
BCW61B
h
FE
120
60
30
180
80
40
250
100
100
380
110
220
310
BCW61C
460
BCW61D
630
Transition Frequency
Emitter-Base Capacitance
Collector-Base Capacitance
Noise Figure
f
T
C
ebo
C
cbo
N
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
-I
C
: -I
B1
: I
B2
=10:1:1mA
R
1
=R
2
=5K
Ω
V
BB
=-3.6V, R
L
=990
Ω
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
Spice parameter data is available upon request for this device
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