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RN2905T5LFT

产品描述transistor pnp us6
产品类别半导体    分立半导体   
文件大小576KB,共7页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准  
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RN2905T5LFT概述

transistor pnp us6

RN2905T5LFT规格参数

参数名称属性值
Datasheets
RN2901-2906
Product Photos
US6-SSM6N
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
系列
Packaging
Tape & Reel (TR)
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transiti200MHz
Power - Max200mW
Mounting TypeSurface Mou
封装 / 箱体
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
Dynamic CatalogPNP Pre-Biased Transistor Arrays
Other NamesRN2905(T5L,F,T)RN2905T5LFTTR

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RN2901~RN2906
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2901, RN2902, RN2903
RN2904, RN2905, RN2906
Unit : mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1901 to RN1906
Equivalent Circuit and Bias Resistor Values
Type No.
RN2901
RN2902
RN2903
RN2904
RN2905
RN2906
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
US6
JEDEC
JEITA
2-2J1A
TOSHIBA
Weight: 6.8 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2901 to 2906
RN2901 to 2906
RN2901 to 2904
RN2905, 2906
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
−50
−50
−10
−5
−100
200
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Equivalent Circuit
(Top View)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1990-12
1
2014-03-01

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