ADVANCED
iPEM
64 Mb ASYNC SRAM
AS8S2M32PEC
64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM
Integrated Plastic Encapsulated Microcircuit
FEATURES
Integrated Real-Time Memory Array Solution
No latency or refresh cycles
Parallel Read/Write Interface
User Configurable via multiple enables
Random Access Memory Array
Fast Access Times: 12, 15, 20, and 25ns
TTL Compatible I/O
Fully Static, No Clocks
Surface Mount Package
68 Lead PLCC, No. 99 JEDEC M0-47AE
Small Footprint, 0.990 Sq. In.
Multiple Ground Pins for Maximum Noise Immunity
Single +3.3V (±10%) Supply Operation
DESCRIPTION
The AS8S2M32 is a high speed, 3.3V, 64Mb SRAM. The
device is available with access times of 12, 15, 20 and
25ns creating a zero wait state/latency, real-time memory
solution. The high speed, 3.3V supply voltage and control
lines,make the device ideal for all your real-time computer
memory requirements.
The device can be configured as a 2M x 32 and used to
create a single chip external data /program memory array
solution or via use of the individual chip enable lines, be
reconfigured as a 4M x 16 or 8M x 8.
The device provides a 40+% space savings when compared
to four 2M x 8, 54 LD TSOP2. In addition the AS8S2M32
has only a 20pF load on the Addr. lines vs. ~30pF for four
plastic SOJs.
PIN CONFIGURATIONS AND BLOCK DIAGRAM
DQ16
DQ15
A16
A18
A17
A15
A14
A20
A19
Vcc
E0\
E3\
E2\
E1\
NC
W\
G\
DQ17
DQ18
DQ19
Vss
DQ20
DQ21
DQ22
DQ23
Vcc
DQ24
DQ25
DQ26
DQ27
Vss
DQ28
DQ29
DQ30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
DQ14
DQ13
DQ12
Vss
DQ11
DQ10
DQ09
DQ08
Vcc
DQ07
DQ06
DQ05
DQ04
Vss
DQ03
DQ02
DQ01
PIN NAMES
A0 - A20
E0\ - E3\
W\
G\
DQ0 - DQ31
Vcc
Vss
NC
Address Inputs
Chip Enables
Write Enables
Output Enable
Common Data Input/Output
Power (+3.3V ± 10%)
Ground
No Connection
BYTE CONTROL TABLE
Chip
Byte
Enable
Control
E0\
DQ0-7
E1\
DQ8-15
E2\
DQ16-23
E3\
DQ24-31
68
67
66
65
64
63
62
61
9
8
7
6
5
4
3
2
1
A0-A20
G\
W\
E0\
E1\
E2\
E3\
2M x 32 Memory
Array
DQ0-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
21
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
A13
A12
A11
A10
A09
A08
DQ31
A07
A6
A5
A4
A3
A2
A1
A0
DQ00
Vcc
43
AS8S2M32PEC
Rev. 0.2 05/10
Micross Components reserves the right to change products or specifications without notice.
1
ADVANCED
iPEM
64 Mb ASYNC SRAM
AS8S2M32PEC
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to Vss
Operating Temperature t
A
(Ambient)
Commercial
Industrial
Military
Storage Temperature, Plastic
Power Dissipation
Output Current
Junction Temperature, TJ
-0.5V to 3.8V
0
o
C to +70
o
C
-40
o
C to +85
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
5.0 Watts
20 mA
175
o
C
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Sym
Min
Typ
V
CC
Supply Voltage
3.0
3.3
V
SS
Supply Voltage
0
0
Input High Voltage
Input Low Voltage
V
IH
V
IL
2.0
-0.3
---
---
Max
3.6
0
Vcc+0.3V
0.8
Units
V
V
V
V
*Stress greater than those listed under "Absolute Maximum Ratings"
may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions greater than those in di cated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
Note: For t
EHQZ
, t
GHQZ
and t
WLQZ
, CL=5pF
Vss to 3.0V
5ns
1.5V
Figure 2
FIG. 2
Vcc
FIG. 3
480Ω
Vcc
480Ω
Q
255Ω
30pF
Q
255Ω
5pF
DC ELECTRICAL CHARACTERISTICS
Parameter
Operating Power Supply Current
Standby (TTL) Power Supply Current
Full Standby Power Supply Current
CMOS
Input Leakage Current
Output Leakage Current
Ouput High Voltage
Output Low Voltage
Sym
I
CC1
I
CC2
I
CC3
I
LI
I
LO
V
OH
V
OL
Conditions
W#=V
IL
, I
I/O
=0mA, Min Cycle
E# V
IH
, V
IN
V
IL
or V
IN
V
IH
, f=0MHz
E# V
CC
-0.2V
V
IN
V
CC
-0.2V or V
IN
0.2V
V
IN
=0V to V
CC
V
I/O
=0V to V
CC
I
OH
=-4.0mA
I
OL
=8.0mA
2.4
0.4
Min
Max
12/15
650
120
120
±5
±5
20/25
525
120
120
Units
ns
mA
mA
mA
μA
μA
V
V
TRUTH TABLE
G# E# W#
X
H
L
X
H
L
L
L
X
H
H
L
Mode
Standby
Output Deselect
Read
Write
Output
HIGH Z
HIGH Z
D
OUT
D
IN
Power
I
CC2
I
CC3
I
CC1
I
CC1
I
CC1
CAPACITANCE
(f=1.0MHz, V
IN
=V
CC
or V
SS
)
Parameter
Sym
Address Lines
CI
Data Lines
CD/Q
Write & Output Enable Line W#, G#
Chip Enable Line
E0#, E3#
Max
20
8
20
7
Unit
pF
pF
pF
pF
AS8S2M32PEC
Rev. 0.2 05/10
Micross Components reserves the right to change products or specifications without notice.
2
ADVANCED
iPEM
64 Mb ASYNC SRAM
AS8S2M32PEC
20ns
Min
Max
20
20
20
3
7
9
3
7
9
0
7
9
0
9
3
9
3
9
25ns
Min
Max
25
25
25
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC CHARACTERISTICS READ CYCLE
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Hold from Address Change
Output Enable to Output Valid
Output Enable to Output in Low Z
Output Enable to Output in High Z
Symbol
JEDEC
Alt.
t
AVAV
t
RC
t
AVQV
t
ELQV
t
ELQX
t
EHQZ
t
AVQX
t
GLQV
t
GLQX
t
GHQZ
t
AA
t
ACS
t
CLZ
t
CHZ
t
OH
t
OE
t
OLZ
t
OHZ
0
6
3
6
0
3
6
3
12ns
Min
Max
12
12
12
3
15ns
Min
Max
15
15
15
READ CYCLE 1 - W\ HIGH, G\, E\ LOW
t
AVAV
A
ADDRESS 1
ADDRESS 2
t
AVQV
Q
t
AVQX
DATA 1
DATA 2
READ CYCLE 2 - W\ HIGH
t
AVAV
A
t
AVQV
E#
t
ELQV
t
ELQX
G#
t
EHQZ
t
GLQV
t
GLQX
Q
t
GHQZ
AS8S2M32PEC
Rev. 0.2 05/10
Micross Components reserves the right to change products or specifications without notice.
3
ADVANCED
iPEM
64 Mb ASYNC SRAM
AS8S2M32PEC
AC CHARACTERISTICS READ CYCLE
Parameter
Write Cycle Time
Chip Enable to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Data Hold Time
Write to Output in High Z
Data to Write Time
Output Active from End of Write
Symbol
JEDEC
Alt.
t
AVAV
t
WC
t
ELWH
t
ELEH
t
AVWL
t
AVEL
t
AVWH
t
AVEH
t
WLWH
t
ELEH
t
WHAZ
t
EHAZ
t
WHDX
t
EHDZ
t
WLQZ
t
DVWH
t
DVEH
t
WHQX
t
CW
t
CW
t
AS
t
AS
t
AW
t
AW
t
WP
t
WP
t
WR
t
WR
t
DH
t
DH
t
WHZ
t
DW
t
DW
t
WLZ
12ns
Min
Max
12
8
8
0
0
8
8
8
10
0
0
0
0
0
6
6
3
6
15ns
Min
Max
15
10
10
0
0
10
10
10
12
0
0
0
0
0
7
7
3
7
20ns
Min
Max
20
11
11
0
0
11
11
11
13
0
0
0
0
0
8
8
3
8
25ns
Min
Max
25
12
12
0
0
12
12
12
14
0
0
0
0
0
9
9
3
9
ns
ns
ns
ns
Units
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE 1 - W\ CONTROLLED
t
AVAV
A
E\
t
ELWH
t
AVWH
t
WLWH
W\
D
t
WHAX
t
AVWL
t
DVWH
t
WHDX
DATA VALID
t
WLQZ
Q
t
WHQX
HIGH Z
AS8S2M32PEC
Rev. 0.2 05/10
Micross Components reserves the right to change products or specifications without notice.
4
ADVANCED
iPEM
64 Mb ASYNC SRAM
AS8S2M32PEC
WRITE CYCLE 2 - E\ CONTROLLED
t
AVAV
A
t
AVEL
E\
t
AVEH
t
WLEH
W\
t
DVEH
D
Q
HIGH Z
t
EHDX
DATA VALID
t
ELEH
t
EHAX
PACKAGE DRAWING
Package No. 99
68
Lead
PLCC
JEDEC MO-47AE
0.995
Max
0.956
Max
0.995 0.956
Max Max
0.020
0.015
0.050
BSC
0.180
Max
0.040
Max
0.930
0.890
0.115
Max
AS8S2M32PEC
Rev. 0.2 05/10
Micross Components reserves the right to change products or specifications without notice.
5
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