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BC214_J35Z

产品描述trans bipo GP pnp 30v 500ma TO-9
产品类别半导体    分立半导体   
文件大小46KB,共4页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准  
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BC214_J35Z概述

trans bipo GP pnp 30v 500ma TO-9

BC214_J35Z规格参数

参数名称属性值
Datasheets
BC214
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
系列
Packaging
Bulk
Transistor TypePNP
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 2mA, 5V
Power - Max625mW
Frequency - Transiti200MHz
Mounting TypeThrough Hole
封装 / 箱体
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

文档预览

下载PDF文档
BC214
BC214
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)-
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Value
-30
-45
-5.0
-500
- 55 ~ 150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= -2mA, I
B
= 0
I
C
= -10µA, I
E
= 0
I
E
= -10µA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -4V, I
C
= 0
V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -100mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
f = 100MHz
V
CE
= -5V, I
C
= -200µA
R
G
= 2kΩ, f = 15.7KHz
I
C
= -2mA, V
CE
= -5V
f = 1KHz
V
CB
= -10V, f = 1MHz
140
-0.6
200
2.0
600
10
pF
100
140
120
Min.
-30
-45
-5.0
-15
-15
Max.
Units
V
V
V
nA
nA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
On Characteristics *
400
-0.25
-0.6
-1.1
-0.72
V
V
V
MHz
dB
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
NF
h
fe
C
OB
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current gain Bandwidth Product
Noise Figure
Small Signal Current Gain
Output Capacitance
Small Signal Characteristics
* Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, July 2004
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