Datasheet> 器件分类 > 半导体> 分立半导体> BCR 151L3 E6327

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BCR 151L3 E6327: 产品描述trans prebias pnp 250mw tslp-3; 产品类别半导体分立半导体; 文件大小200KB，共11页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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BCR 151L3 E6327概述

trans prebias pnp 250mw tslp-3

BCR 151L3 E6327规格参数

参数名称	属性值
Datasheets
BCR151
Product Photos
TSLP-3-1
Standard Package	15,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single, Pre-Biased
系列 Packaging	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	50mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	100k
Resistor - Emitter Base (R2) (Ohms)	100k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transiti	120MHz
Power - Max	250mW
Mounting Type	Surface Mou
封装 / 箱体 Package / Case	SC-101, SOT-883
Supplier Device Package	PG-TSLP-3
Other Names	BCR151L3E6327XTSP000014865

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BCR151...

PNP Silicon Digital Transistor

•

Switching circuit, inverter, interface circuit,

driver circuit

•

Built in bias resistor (R

= 100kΩ ,

= 100kΩ)

BCR151F/L3

BCR151T

EHA07183

Type

BCR151F*

BCR151L3*

BCR151T*

* Preliminary

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Input forward voltage

Input reverse voltage

Collector current

Total power dissipation-

BCR151F,

≤

128°C

BCR151L3,

≤

135°C

BCR151T,

≤

109°C

Junction temperature

Storage temperature

Marking

UDs

1=B

Pin Configuration

2=E

3=C

Package

TSFP-3

TSLP-3-4

SC75

Symbol

CEO

CBO

i(fwd)

i(rev)

tot

Value

250

Unit

stg

150

-65 ... 150

°C

2006-05-03

BCR 151L3 E6327相似产品对比

	BCR 151L3 E6327	BCR 151F E6327	BCR 151T E6327
描述	trans prebias pnp 250mw tslp-3	trans prebias pnp 250mw tsfp-3	trans prebias pnp 250mw sc75
Standard Package	15,000	3,000	-
Category	Discrete Semiconductor Products	Discrete Semiconductor Products	-
Family	Transistors (BJT) - Single, Pre-Biased	Transistors (BJT) - Single, Pre-Biased	-
系列 Packaging	Tape & Reel (TR)	Tape & Reel (TR)	-
Transistor Type	PNP - Pre-Biased	PNP - Pre-Biased	-
Current - Collector (Ic) (Max)	50mA	50mA	-
Voltage - Collector Emitter Breakdown (Max)	50V	50V	-
Resistor - Base (R1) (Ohms)	100k	100k	-
Resistor - Emitter Base (R2) (Ohms)	100k	100k	-
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V	70 @ 5mA, 5V	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA	300mV @ 250µA, 5mA	-
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	-
Frequency - Transiti	120MHz	120MHz	-
Power - Max	250mW	250mW	-
Mounting Type	Surface Mou	Surface Mou	-
封装 / 箱体 Package / Case	SC-101, SOT-883	SOT-723	-
Supplier Device Package	PG-TSLP-3	PG-TSFP-3	-
Other Names	BCR151L3E6327XTSP000014865	BCR151FE6327XTSP000014863	-

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