Philips Semiconductors
Product specification
Microwave power transistor
FEATURES
•
Diffused emitter ballasting resistors
improve excellent current sharing
and withstanding a high VSWR
•
Interdigitated common-base
structure provides high emitter
efficiency
•
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
•
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
•
Internal input and output
prematching networks allow an
easier design of circuits.
APPLICATIONS
Intended for use in common-base
class C power amplifiers at 1.6 GHz.
3
PLB16004U
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common base class C
narrowband amplifier.
MODE OF
OPERATION
Class C (CW)
f
(GHz)
1.6
V
CC
(V)
28
P
L
(W)
>4.5
G
p
(dB)
>8.5
η
C
(%)
>40
Z
i
; Z
L
(Ω)
see Figs 5
and 6
PINNING - SOT437A
PIN
1
2
3
collector
emitter
base connected to flange
DESCRIPTION
handbook, 4 columns
1
c
b
e
2
Top view
MAM112
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with base connected
to flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.3 mm from ceramic.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
t
≤
10 s; note 1
T
mb
= 75
°C
R
BE
= 0
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
−
PLB16004U
MIN.
MAX.
40
40
15
3
0.5
9
+150
200
235
UNIT
V
V
V
V
A
W
°C
°C
°C
handbook, halfpage
10
MLC457
P tot
(W)
8
6
4
2
0
50
0
50
100
150
200
o
T mb ( C)
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
Microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. See
“Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CES
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
h
FE
PARAMETER
collector cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
DC current gain
CONDITIONS
R
BE
= 0; V
CE
= 30 V
I
C
= 1 mA; I
E
= 0
I
C
= 1 mA; I
E
= 0
I
C
= 1 mA; I
E
= 0
I
C
= 300 mA; V
CE
= 5 V
−
40
40
3
15
MIN.
−
−
−
PARAMETER
thermal resistance from junction to mounting base
CONDITIONS
T
j
= 100
°C
PLB16004U
MAX.
11
0.3
UNIT
K/W
K/W
thermal resistance from mounting base to heatsink note 1
MAX.
200
V
V
V
UNIT
µA
100
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°C
in a common-base test circuit as shown in Fig.3.
MODE OF
OPERATION
Class C (CW)
f
(GHz)
1.6
V
CC
(V)
28
P
L
(W)
typ. 5
G
p
(dB)
typ. 10
η
C
(%)
typ. 50
Z
i
; Z
L
(Ω)
see Figs 5 and 6
1997 Feb 18
4
Philips Semiconductors
Product specification
Microwave power transistor
PLB16004U
handbook, full pagewidth
30
30
2.5 3.0 2.5
2.0
5.0
8.0
7.8
2.5 5.0
6.5
16.0
40
1.1
2.5
4.0
4.0
3.0
5.8
4.0
4.0
18.5
40
1.1
MLC456
Dimensions in mm.
Substrate: Teflon fibre glass.
Thickness: 0.4 mm.
Permittivity:
ε
r
= 2.55.
Fig.3 Narrowband test circuit.
handbook, halfpage
6
MLC458
PL
(W)
4
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
P i (W)
V
CC
= 28 V; f = 1.6 GHz.
Fig.4 Load power as a function of input power.
1997 Feb 18
5
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