V54C3256(16/80/40)4VC
256Mbit SDRAM
3.3 VOLT, TSOP II / FBGA PACKAGE
16M X 16, 32M X 8, 64M X 4
6
System Frequency (f
CK
)
Clock Cycle Time (t
CK3
)
Clock Access Time (t
AC3
) CAS Latency = 3
Clock Access Time (t
AC2
) CAS Latency = 2
166 MHz
6 ns
5.4 ns
5.4 ns
7PC
143 MHz
7 ns
5.4 ns
5.4 ns
7
143 MHz
7 ns
5.4 ns
6 ns
8PC
125 MHz
8 ns
6 ns
6 ns
Features
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4 banks x 4Mbit x 16 organization
4 banks x 8Mbit x 8 organization
4 banks x16Mbit x 4 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or
Interleave
Programmable Burst Length:
1, 2, 4, 8 for Sequential Type
1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 8192 cycles/64 ms
Available in 54 Pin TSOP II, 60 Ball FBGA
LVTTL Interface
Single +3.3 V
±0.3
V Power Supply
Description
The V54C3256(16/80/40)4VC is a four bank Syn-
chronous DRAM organized as 4 banks x 4Mbit x 16,
4 banks x 8Mbit x 8, or 4 banks x 16Mbit x 4. The
V54C3256(16/80/40)4VC achieves high speed data
transfer rates up to 166 MHz by employing a chip
architecture that prefetches multiple bits and then
synchronizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
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Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
Package Outline
T/S
•
Access Time (ns)
6
•
Power
8PC
•
7PC
•
7
•
Std.
•
L
•
U
•
Temperature
Mark
Blank
V54C3256(16/80/40)4VC Rev. 1.1 March 2004
1
ARM技术
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