PLQ 08
PLQ 1
FAST RECOVERY RECTIFIER DIODES
VERY FAST FORWARD AND REVERSE
RECOVERY DIODES
SUITABLE APPLICATION
SWTCHING POWER TRANSISTORS DRIVER
CI R CU I T S
( SERI E S
DI O D ES
IN
ANTISATURATION CLAMP SPEED UP DIODE
IN DISCRETE DARLINGTON...)
THYRISTORS GATE DRIVER CIRCUITS
HIGH FREQUENCY RECTIFICATION
ABSOLUTE RATINGS
(limiting values)
Symbol
I
FRM
I
F (AV)
I
FSM
P
tot
T
stg
T
j
T
L
Parameter
Repetive Peak Forward Current
Average Forward Current*
Surge non Repetitive Forward Current
Power Dissipation*
Storage and Junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
t
p
≤
20µs
T
a
= 25°C
δ
= 0.5
t
p
= 10ms
Sinusoidal
Ta = 25°C
F 126
(Plastic)
Value
20
1
20
1.7
- 40 to 125
230
Unit
A
A
A
W
°C
°C
Symbol
V
RRM
V
RSM
Parameter
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
PLQ 08
80
80
PLQ 1
100
100
Unit
V
V
THERMAL RESISTANCE
Symbol
R
th (j - a)
Junction-ambient*
Parameter
Value
60
Unit
°C/W
* On infinite heatsink with 10mm lead length.
November 1994
1/5
PLQ 08/PLQ 1
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Synbol
I
R
T
j
= 25°C
T
j
= 100°C
V
F
T
j
= 25°C
I
F
= 1A
Test Conditions
V
R
= V
RRM
Min.
Typ.
Max.
10
0.5
1.1
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
t
rr
t
fr
T
j
= 25°C
V
R
= 30V
T
j
= 25°C
Measured at 1.1 x V
F
Test Conditions
I
F
= 1A
See figure 12
I
F
= 1A
di
F
/dt = - 50A/µs
t
r
= 20ns
Min.
Typ.
Max.
50
50
Unit
ns
ns
2/5
PLQ 08/PLQ 1
Figure 1. Power losses versus average
current.
Figure 2. Allowable DC current versus
ambient temperature.
Figure 3. Non repetitive surge peak current
versus number of cycles.
Figure 4. Transient thermal impedance
junction-ambient. Printed circuit versus pulse
duration (L = 10 mm).
Figure 5. Voltage drop versus forward current.
Figure 6. Voltage drop versus forward current.
3/5
PLQ 08/PLQ 1
Figure 7. Capacitance versus reverse voltage
applied.
F ig u re
8.
T hermal
resis tan ce
junction-ambient versus lead length.
Figure 9. Recovery time versus di
F
/dt.
Figure 10. Peak reverse current versus di
F
/dt.
Figure 11. Dynamic parameters versus
junction temperature.
Figure 12. Measurement of t
rr
(fig. 8) and I
RM
(fig. 10).
4/5
PLQ 08/PLQ 1
PACKAGE MECHANICAL DATA
F 126 (Plastic)
B
note 1 E
A
B
E note 1
/
O
C
/
O
D
note 2
O
D
/
DIMENSIONS
REF.
A
B
∅
C
∅
D
E
Millimeters
Min.
6.05
26
2.95
0.76
3.05
0.86
1.27
Max.
6.35
Inches
Min.
0.238
1.024
0.116
0.029
0.120
0.034
0.050
Max.
0.250
NOTES
1 - The lead diameter
∅
D is not controlled over zone E
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
Cooling method: by convection (method A)
Marking: type number
Weight: 0.4g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A.
5/5
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