MG400V2YS60A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
Compact IGBT
Series Module
400 Amperes/1700 Volts
A
D
H
J
K
DETAIL "A"
C2E1
E2
C1
B E F
W
M
F
#110 TAB
(8 PLACES)
X (4 PLACES)
Y (3 PLACES)
Q
T
R
S
TH1
TH2
G1
F
O
1
E1
E1/C2
DETAIL "A"
F
O
2
E2
G2
G
U
G
N
C
P
TH1
TH2
V
L
F
O
1
E1
G1
C1
V
V
L
V
V
G2
F
O
2
E2
E2
Description:
Powerex Dual IGBTMOD™
Compact IGBT Series Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration, with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Over-Current and
Over-Temperature Protection
£
Low V
CE(sat)
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
UPS
£
Welding Power Supplies
£
Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG400V2YS60A is a
1700V (V
CES
), 400 Ampere
Dual IGBTMOD™ Compact IGBT
Series Module.
Type
MG
Current Rating
Amperes
400
V
CES
Volts (x 10)
170
1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
Inches
4.92±0.04
3.78±0.04
0.84±0.04
4.49±0.03
3.30±0.03
0.86±0.04
1.46±0.04
0.75±0.04
0.71±0.04
0.73±0.04
0.59±0.04
3.66±0.03
Millimeters
125.0±1.0
96.0±1.0
21.3±1.0
113.0±0.8
84.0±0.8
22.0±1.0
37.0±1.0
19.0±1.0
18.0±1.0
18.6±1.0
15.0±1.0
93.0±0.8
Dimensions
Inches
Millimeters
N
0.07±0.04
1.8±1.0
P
1.24±0.04
31.5±1.0
Q
0.40±0.03
10.2±0.8
R
0.34±0.03
8.7±0.8
S
4.92±0.04
125.0±1.0
T
1.24-0.01/+0.04 31.5+2.0/-0.8
U
1.81±0.04
46.0±1.0
V
0.22±0.04
5.6±1.0
W
0.63±0.03
16.0±0.8
X
0.21 Dia.
5.5 Dia.
Y
M8 Metric
M8
7/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current (DC)
Forward Current (DC)
Collector Dissipation (T
C
= 25°C)
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M8 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
V
CES
V
GES
I
C
I
F
P
C
T
j
T
stg
—
—
—
V
ISO
MG400V2YS60A
1700
±20
400
400
4300
-20 to 150
-40 to 125
27
88
680
4000
Units
Volts
Volts
Amperes
Amperes
Watts
°C
°C
in-lb
in-lb
Grams
Volts
Electrical and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Gate Leakage Current
Collector Cutoff Current
Gate-Emitter Cutoff Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Gate-Emitter Voltage
Gate Resistance
Inductive Load
Switching
Times
Symbol
I
GES
I
CES
V
GE(off)
V
CE(sat)
C
ies
V
GE
R
G
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
Forward Voltage
Reverse Recovery Time
Junction to Case Thermal Resistance
RTC Operating Current
V
F
t
rr
R
th(j-c)Q
R
th(j-c)D
I
rtc
I
F
= 400A, V
GE
= 0V, T
j
= 25°C
I
F
= 400A, V
GE
= 0V, T
j
= 125°C
I
F
= 400A, V
GE
= -15V, di/dt = 2000A/µs
IGBT (Per 1/2 Module)
FWDi (Per 1/2 Module)
T
j
= 25°C
V
CC
= 900V, I
C
= 400A,
V
GE
= ±15V, R
G
= 8.2Ω
Test Conditions
V
GE
= ±20V, V
CE
= 0V
V
CE
= 1700V, V
GE
= 0V
I
C
= 400mA,V
CE
= 5V
V
GE
= 15V, I
C
= 400A, T
j
= 25°C
V
GE
= 15V, I
C
= 400A, T
j
= 125°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
Min.
—
—
4.5
—
—
—
13.0
8.2
—
—
—
—
—
—
—
—
—
—
—
800
Typ.
—
—
5.5
3.0
3.8
45000
15.0
—
0.35
0.2
0.55
0.9
0.4
1.3
3.2
2.4
0.2
—
—
—
Max.
±10
1.0
6.5
3.4
4.2
—
17.0
15.0
—
—
—
—
0.6
—
4.2
—
0.4
0.029
0.056
—
Units
µA
mA
Volts
Volts
Volts
pF
Volts
Ω
µs
µs
µs
µs
µs
µs
Volts
Volts
µs
°C/Watt
°C/Watt
Amperes
2
7/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
FREE-WHEEL CHARACTERISTICS
(TYPICAL)
800
T
j
= 25°C
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
800
12V
10V
9V
T
j
= 125°C
15V
10V
12V
9V
15V
1000
FORWARD CURRENT, I
F
, (AMPERES)
600
600
V
GE
= 20V
750
V
GE
= 0V
T
j
= 25°C
T
j
= 125°C
400
V
GE
= 20V
8V
400
8V
500
200
200
250
0
0
2
4
6
8
10
0
0
2
4
6
8
10
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
FORWARD VOLTAGE, V
F
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
12
10
8
6
4
2
0
I
C
= 800A
I
C
= 400A
I
C
= 200A
COLLECTOR CURRENT, I
C
, (AMPERES)
800
T
j
= 125°C
T
j
= 25°C
10
8
6
I
C
= 800A
600
400
4
2
0
I
C
= 400A
I
C
= 200A
200
V
CE
= 5V
T
j
= 25°C
T
j
= 125°C
0
5
10
15
20
0
5
10
15
20
0
0
5
10
15
20
25
30
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
TURN-OFF TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-ON TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10
4
10
4
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
10
4
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
SWITCHING TIME, t
d(off)
, (µs)
SWITCHING TIME, t
off
, (µs)
SWITCHING TIME, t
on
, (µs)
10
3
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
10
3
10
3
10
2
0
100
200
300
400
10
2
0
100
200
300
400
10
2
0
100
200
300
400
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
7/05
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10
4
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
10
4
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
10
3
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
SWITCHING TIME, t
d(on)
, (µs)
SWITCHING TIME, t
f
, (µs)
10
3
10
3
SWITCHING TIME, t
r
, (µs)
10
2
10
2
0
100
200
300
400
10
2
0
100
200
300
400
10
1
0
100
200
300
400
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
TURN-OFF TIME VS.
GATE RESISTANCE
(TYPICAL)
TURN-ON TIME VS.
GATE RESISTANCE
(TYPICAL)
TURN-OFF DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
10
4
10
4
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
4
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
3
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
3
SWITCHING TIME, t
d(off)
, (µs)
SWITCHING TIME, t
off
, (µs)
SWITCHING TIME, t
on
, (µs)
10
3
10
2
6
8
10
12
14
16
10
2
6
8
10
12
14
16
10
2
6
8
10
12
14
16
GATE RESISTANCE, R
G
, (Ω)
GATE RESISTANCE, R
G
, (Ω)
GATE RESISTANCE, R
G
, (Ω)
TURN-ON DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
FALL TIME VS.
GATE RESISTANCE
(TYPICAL)
RISE TIME VS.
GATE RESISTANCE
(TYPICAL)
10
4
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
4
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
4
SWITCHING TIME, t
d(on)
, (µs)
SWITCHING TIME, t
r
, (µs)
SWITCHING TIME, t
f
, (µs)
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
3
10
3
10
3
10
2
6
8
10
12
14
16
10
2
6
8
10
12
14
16
10
2
6
8
10
12
14
16
GATE RESISTANCE, R
G
, (Ω)
GATE RESISTANCE, R
G
, (Ω)
GATE RESISTANCE, R
G
, (Ω)
4
7/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
10
3
SWITCHING LOSS, E
off
, (mJ/PULSE)
SWITCHING LOSS, E
on
, (mJ/PULSE)
10
3
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
10
2
10
2
SWITCHING LOSS, E
off
, (mJ/PULSE)
V
CC
= 900V
V
GE
= ±15V
R
G
= 8.2Ω
T
j
= 25°C
T
j
= 125°C
10
4
10
3
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
1
0
100
200
300
400
10
1
0
100
200
300
400
10
2
6
8
10
12
14
16
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
GATE RESISTANCE, R
G
, (
Ω
)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
REVERSE RECOVERY CURRENT
(TYPICAL)
REVERSE RECOVERY TIME
(TYPICAL)
10
4
SWITCHING LOSS, E
on
, (mJ/PULSE)
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
3
V
CC
= 900V
V
GE
= ±15V
I
C
= 400A
T
j
= 25°C
T
j
= 125°C
10
2
V
CC
= 900V
V
GE
= -10V
di/dt = 2000A/µs
T
j
= 25°C
T
j
= 125°C
10
2
V
CC
= 900V
V
GE
= -10V
di/dt = 2000A/µs
T
j
= 25°C
T
j
= 125°C
10
2
6
8
10
12
14
16
10
1
0
100
200
300
400
10
1
0
100
200
300
400
GATE RESISTANCE, R
G
, (
Ω
)
FORWARD CURRENT, I
F
, (AMPERES)
FORWARD CURRENT, I
F
, (AMPERES)
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT
(TYPICAL )
REVERSE RECOVERY LOSS, E
dsw
, (mJ/PULSE)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
10
2
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
10
5
C
ies
COLLECTOR CURRENT, I
iC
, (AMPERES)
10
3
10
4
10
1
V
CC
= 900V
V
GE
= -10V
di/dt = 2000A/µs
T
j
= 25°C
T
j
= 125°C
10
2
10
3
V
GE
= 0V
f = 1MHz
T
j
=
25°C
C
oes
C
res
V
GE
= ±15V
R
G
= 8.2Ω
T
j
≤
125°C
10
0
0
100
200
300
400
10
2
10
-1
10
0
10
1
10
2
10
1
0
500
1000
1500
2000
FORWARD CURRENT, I
F
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
7/05
5
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