Freescale Semiconductor
Technical Data
Document Number: MRF6S19100H
Rev. 5, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 22 Watts Avg., f = 1987 MHz, IS - 95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB
@ 0.01% Probability on CCDF.
Power Gain — 16.1 dB
Drain Efficiency — 28%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19100HR3
MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 77°C, 22 W CW
Symbol
R
θJC
Value
(2,3)
0.44
0.50
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2004 - 2006, 2008. All rights reserved.
MRF6S19100HR3 MRF6S19100HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
3A (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.5
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
0.1
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 22 W Avg., f = 1987 MHz, 2 - carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz Offset. IM3 measured in
1.2288 MHz Channel Bandwidth @
±2.5
MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
15
26
—
—
—
16.1
28
- 37
- 51
- 15
18
—
- 35
- 48
-9
dB
%
dBc
dBc
dB
MRF6S19100HR3 MRF6S19100HSR3
2
RF Device Data
Freescale Semiconductor
+
B1
V
BIAS
R2
RF
INPUT
+
C5
Z3
C3
C1
C2
DUT
Z4
R1
C4
Z5
Z6
Z7
Z8
Z9
C7
C8
+
C9
+
C10 C11
Z10
C6
+
C12
Z11
V
SUPPLY
RF
OUTPUT
Z1
Z2
Z1
Z2
Z3
Z4
Z5
Z6
0.130″ x 0.084″ Microstrip
0.360″ x 0.084″ Microstrip
0.260″ x 0.084″ Microstrip
0.950″ x 0.084″ Microstrip
0.457″ x 0.940″ Microstrip
0.083″ x 0.940″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.091″ x 0.900″ Microstrip
0.493″ x 0.900″ Microstrip
0.440″ x 0.195″ Microstrip
0.470″ x 0.084″ Microstrip
0.735″ x 0.084″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF6S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1, C2
C3
C4, C7
C5
C6
C8, C10
C9
C11
C12
R1
R2
RF Bead
0.6 - 4.5 pF Variable Capacitors, Gigatronics
15 pF Chip Capacitor
5.6 pF Chip Capacitors
1
μF,
50 V Tantalum Chip Capacitor
43 pF Chip Capacitor
22
μF,
35 V Tantalum Chip Capacitors
10
μF,
35 V Tantalum Chip Capacitor
0.1
μF
Chip Capacitor
100
μF,
50 V Electrolytic Capacitor
12
Ω,
1/4 W Chip Resistor
2 kW, 1/4 W Chip Resistor
Description
Part Number
2743019447
27271SL
ATC100B150CT500XT
ATC100B5R6JT500XT
T491C105K050AT
ATC100B430CT500XT
T491X226K035AT
T491C106K035AT
C1825C14J5RAC
MCHT101M1HB- 1017 - RH
CRCW120612R0FKEA
CRCW12062001FKEA
Manufacturer
Fair - Rite
Johanson Dielectrics
ATC
ATC
Kemet
ATC
Kemet
Kemet
Kemet
Multicomp
Vishay
Vishay
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
3
C8 C9
B1
V
GG
R1
C12
R2
C5
C4
C7
C1
1
C10
+
V
DD
-
C1
C2
C3
C6
CUT OUT AREA
MRF6S19100H/HS
Rev 2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF6S19100HR3(HSR3) Test Circuit Component Layout
MRF6S19100HR3 MRF6S19100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
16.6
16.4
G
ps
, POWER GAIN (dB)
G
ps
16.2
16
15.8
IRL
15.6
ACPR
1940
1950
1960
1970
1980
IM3
V
DD
= 28 Vdc, P
out
= 22 W (Avg.), I
DQ
= 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
25
−35
−41
−47
−53
1990
η
D
29
27
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
15.4
1930
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 22 Watts Avg.
16.2
η
D
16
G
ps
, POWER GAIN (dB)
15.8
15.6
15.4
15.2
15
14.8
1930
IRL
ACPR
G
ps
V
DD
= 28 Vdc, P
out
= 44 W (Avg.), I
DQ
= 900 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
40
38
−25
−30
−35
−40
−45
1990
IM3 (dBc), ACPR (dBc)
−5
−10
−15
−20
42
η
D
, DRAIN
EFFICIENCY (%)
IM3
1940
1950
1960
1970
1980
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ P
out
= 44 Watts Avg.
18
I
DQ
= 1300 mA
17
G
ps
, POWER GAIN (dB)
1125 mA
16
900 mA
675 mA
450 mA
14
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
13
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−15
−20
−25
−30
I
DQ
= 450 mA
−35
−40
−45
−50
−55
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
900 mA
1125 mA
1300 mA
675 mA
V
DD
= 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
15
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19100HR3 MRF6S19100HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
模拟与混合信号
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