RF power transistor optimized for civilian and military
pulsed avionics amplifier applications for the
960 MHz to 1215 MHz range such as Mode-S,
TCAS, JTIDS, DME and TACAN. Using state of the
art wafer fabrication processes, these high
performance transistors provide high gain,
efficiency, bandwidth, ruggedness over a wide
bandwidth for today’s demanding application needs.
High breakdown voltages allow for reliable and
stable operation in extreme mismatched load
conditions unparalleled with older semiconductor
technologies.
Typical RF Performance under standard operating conditions, P
OUT
= 250 W (Peak)
Freq
(MHz)
960
1030
1090
1150
1215
P
IN
(W)
3.4
4.2
3.4
3.4
3.5
Gain
(dB)
18.7
17.8
18.7
18.7
18.6
I
D
(A)
8.5
8.3
8.2
8.2
8.6
Eff.
(%)
58.8
60.1
61.1
60.7
58.0
RL
(dB)
-8.8
-12.7
-9.3
-8.6
-11.5
Droop
(dB)
0.4
0.4
0.4
0.3
0.4
VSWR-S
(5:1)
S
S
S
S
S
VSWR-T
(10:1)
P
P
P
P
P
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-000912-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Electrical Specifications: Freq. = 960 - 1215 MHz, T
A
= 25°C
Parameter
RF Functional Tests
Peak Input Power
Power Gain
Drain Efficiency
Load Mismatch Stability
Load Mismatch Tolerance
V
DD
= 50 V, I
DQ
= 250 mA,
Pulse Width = 128 μs, Duty Cycle = 10%,
P
OUT
= 125 W Peak (12.5 W avg.)
P
IN
G
P
η
D
VSWR-S
VSWR-T
-
16.7
52
-
-
3.5
18.5
59.7
5:1
10:1
5.3
-
-
-
-
W
dB
%
-
-
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Rev. V3
Electrical Characteristics: T
A
= 25°C
Parameter
DC Characteristics
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Not applicable - Input matched
V
DS
= 50 V, V
GS
= -8 V,
Freq. = 1 MHz
C
ISS
C
OSS
C
RSS
N/A
-
-
N/A
22
2.2
N/A
-
-
pF
pF
pF
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 30 mA
V
DS
= 5 V, I
D
= 7 mA
I
DS
V
GS (TH)
G
M
-
-5
5.0
0.4
-3.1
7.7
12
-2
-
mA
V
S
Test Conditions
Symbol
Min.
Typ.
Max.
Units
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-000912-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Absolute Maximum Ratings
1,2,3
Parameter
Drain Voltage (V
DD
)
Gate Voltage (V
GG
)
Drain Current (I
DD
)
Input Power
4
(P
IN
)
Operating Junction Temperature
5
Peak Pulsed Power Dissipation at 85 ºC
Operating Temperature Range
Storage Temperature Range
ESD Maximum - Machine Model (MM)
ESD Maximum - Human Body Model (HBM)
Limit
+65 V
-8 to -2 V
18.9 A
P
IN
(nominal) + 3 dB
250 ºC
700 W
-40 to +95 ºC
-65 to +150 ºC
50 V
250 V
Rev. V3
1. Exceeding any one or combination of these limits may cause permanent damage to this device.
2. MACOM does not recommend sustained operation near these survivability limits.
3. For saturated performance it is recommended that the sum of ( 3 * V
DD
+ | V
GG
| ) < 175 V.
4. Input Power Limit is +3 dB over nominal drive required to achieve P
OUT
= 250 W.
5. Operating junction temperature is measured with infrared (IR) microscope. Junction temperature directly affects a device's MTTF and
should be kept as low as possible to maximize lifetime.
MTTF = 5.3 x 10
6
hours (T
J
< 200 °C)
MTTF = 6.8 x 10
4
hours (T
J
< 250 °C)
Thermal Characteristics
Parameter
Thermal Resistance
Test Conditions
T
C
= 70 ºC, V
DD
= 50 V, I
DQ
= 250 mA, P
OUT
= 250 W,
Pulse Width = 128 µs, Duty Cycle = 10%
Symbol
Θ
JC
Typical
0.25
Units
°C/W
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-000912-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
Test Fixture Assembly
Rev. V3
Contact MACOM for additional circuit information.
Test Fixture Impedances
Freq. (MHz)
Z
IF
(Ω)
Z
OF
(Ω)
Correct Device Sequencing
4.0 + j0.0
3.7 - j0.4
3.6 - j0.4
3.5 - j0.4
3.6 - j0.5
960
1030
1090
1150
1215
Zif
2.6 - j4.6
2.8 - j3.6
2.8 - j3.9
2.7 - j3.5
2.8 - j3.1
Turning the device ON
1. Set V
GS
to the pinch-off (V
P
), typically -5 V.
2. Turn on V
DS
to nominal voltage (50 V).
3. Increase V
GS
until the I
DS
current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V
GS
down to V
P.
3. Decrease V
DS
down to 0 V.
4. Turn off V
GS
INPUT
NETWORK
Zof
OUTPUT
NETWORK
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAGX-000912-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
RF Power Transfer Curve (Output Power Vs. Input Power)
350
Rev. V3
300
Pout (W)
250
200
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
150
100
1.0
1.5
2.0
2.5
3.0
Pin (W)
3.5
4.0
4.5
5.0
RF Power Transfer Curve (Drain Efficiency Vs. Output Power)
76.0
68.0
60.0
52.0
960 MHz
1030 MHz
1090 MHz
1150 MHz
1215 MHz
Eff (%)
44.0
36.0
100
150
200
Pout (W)
250
300
350
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
Logic analyzers are widely used tools in digital design verification and debugging. They can verify the proper functioning of digital circuits and help users identify and troubleshoot faults. They ...[详细]
FPGA/CPLD
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