MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
TMD0507-2A
FEATURES
HIGH POWER
P1dB=33.0dBm at 5.1GHz to 7.2GHz
HIGH GAIN
G1dB=22.0dB at 5.1GHz to 7.2GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
( Ta= 25
°
C )
SYMBOL
V
DD
V
GG
P
in
T
f
T
stg
UNIT
V
V
dBm
°
C
°
C
RATING
15
-10
20
-30
∼
+80
-65
∼
+175
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Gain Flatness (1)*
Gain Flatness (2)**
Drain Current***
Input VSWR
ΔG1
ΔG2
I
DD
VSWRin
G
1dB
SYMBOL
P
1dB
( Ta= 25
°
C )
UNIT
dBm
MIN.
32.0
20.0
⎯
⎯
⎯
⎯
TYP. MAX.
33.0
22.0
⎯
⎯
1.7
⎯
⎯
⎯
±2.0
±1.5
2.0
3.0
CONDITION
V
DD1
=V
DD2
=V
DD3
= 10V
V
GG
= -5V
dB
dB
f
= 5.1 – 7.2GHz
dB
A
⎯
*
ΔG1
at f = 5.1 – 7.2GHz
**
ΔG2
at f = 5.9 – 7.2GHz
*** I
DD
= I
DD1
+ I
DD2
+ I
DD3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar. 2006
TMD0507-2A
PACKAGE OUTLINE (2-11E1A)
2.5
±
0.3
C2.0
Unit in mm
8-0.4±0.1
10
±0.3
15
±0.3
1.0
±0.3
9
7-R0.4
2.0MIN.
11
±
0.3
2.0MIN.
0.1
±0.05
6-2.54
±0.2
: V
DD1
: RF IN
: V
DD2
: V
GG
: V
DD3
: RF OUT
: No Connection
: V
DD3
: GND
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260°C.
Flanges of devices should be attached using screws and washers.
Recommended
torque is 0.18-0.20 N·m.
2
2.5MAX.
0.5
±0.2
0.5
±0.2
18
±0.3
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