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BPX 38: 产品描述phototransistors photodiode; 产品类别传感器; 文件大小249KB，共11页; 制造商All Sensors; 标准

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BPX 38概述

phototransistors photodiode

BPX 38规格参数

参数名称	属性值
Manufacture	Osram Opto Semiconduc
产品种类 Product Category	Phototransistors
RoHS	Yes
Maximum Power Dissipati	220 mW
Maximum On-State Collector Curre	50 mA
Maximum Dark Curre	100 nA
封装 / 箱体 Package / Case	TO-18
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Breakdown Voltage	50 V
Collector-Emitter Saturation Voltage	200 mV
Maximum Collector Curre	50 mA
最大工作温度 Maximum Operating Temperature	+ 125 C
最小工作温度 Minimum Operating Temperature	- 40 C
Produc	Phototransistors
工厂包装数量 Factory Pack Quantity	1000
类型 Type	Chi
Wavelength	880 nm

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2014-01-14

Silicon NPN Phototransistor

NPN-Silizium-Fototransistor

Version 1.1

BP 103

•

Spectral range of sensitivity:

(typ) 450 ... 1100

•

Package:

Metal Can (TO-18), hermetically sealed,

Epoxy

•

Special:

Base connection

• High linearity

Features:

•

Spektraler Bereich der Fotoempfindlichkeit:

(typ) 450 ... 1100 nm

•

Gehäuse:

Metall Gehäuse (TO-18), hermetisch

dicht, Harz

•

Besonderheit:

Basisanschluss

• Hohe Linearität

Besondere Merkmale:

Applications

•

Photointerrupters

Industrial electronics

For control and drive circuits

Computer-controlled flashes

Anwendungen

•

Lichtschranken

Industrieelektronik

Messen / Steuern / Regeln

Computer-Blitzlichtgeräte

Ordering Information

Bestellinformation

Type:

Typ:

Photocurrent

Fotostrom

= 950 nm, E

= 0.5 mW/cm , V

= 5 V

PCE

[µA]

BP 103

BP 103-3/4

Note:

Anm.:

Ordering Code

Bestellnummer

> 80

125 ... 400

Q62702P0075

Q62702P3577

Only one bin within one packing unit (variation less than 2:1)

Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1)

2014-01-14

BPX 38相似产品对比

	BPX 38	BPX 38-3	BPX 43-3/4	BPX 38-2/3	BPX 43-4	BPY 62-4	BPX 38-4	BPX 43-4/5	BPX 43-5
描述	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode	phototransistors photodiode
Manufacture	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc	Osram Opto Semiconduc
产品种类 Product Category	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors
RoHS	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Maximum Power Dissipati	220 mW	220 mW	220 mW	220 mW	220 mW	200 mW	220 mW	220 mW	220 mW
Maximum On-State Collector Curre	50 mA	50 mA	50 mA	50 mA	50 mA	100 mA	50 mA	50 mA	50 mA
Maximum Dark Curre	100 nA	100 nA	100 nA	100 nA	100 nA	50 nA	100 nA	100 nA	100 nA
封装 / 箱体 Package / Case	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18	TO-18
Maximum Collector Curre	50 mA	50 mA	50 mA	50 mA	50 mA	100 mA	50 mA	50 mA	50 mA
最大工作温度 Maximum Operating Temperature	+ 125 C	+ 125 C	+ 125 C	+ 125 C	+ 125 C	+ 125 C	+ 125 C	+ 125 C	+ 125 C
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
工厂包装数量 Factory Pack Quantity	1000	1000	1000	1000	1000	1000	1000	1000	1000
类型 Type	Chi	Chi	Chi	Chi	Chi	Chi	Chi	Chi	Chi
Collector- Emitter Voltage VCEO Max	50 V	-	50 V	50 V	50 V	35 V	50 V	50 V	50 V
Collector-Emitter Breakdown Voltage	50 V	-	50 V	50 V	50 V	35 V	50 V	-	50 V
Collector-Emitter Saturation Voltage	200 mV	-	240 mV	200 mV	240 mV	160 mV	200 mV	240 mV	260 mV
Produc	Phototransistors	-	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors
Wavelength	880 nm	-	880 nm	880 nm	880 nm	830 nm	880 nm	950 nm	880 nm
Fall Time	-	12 us	13 us, 15 us	9 us, 12 us	15 us	9 us	15 us	15 us, 18 us	18 us
Rise Time	-	12 us	13 us, 15 us	9 us, 12 us	15 us	9 us	15 us	15 us, 18 us	18 us

BPX 38

BPX 38概述

BPX 38规格参数

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