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HN2S02FU

产品描述high speed switching application
产品类别分立半导体    二极管   
文件大小174KB,共4页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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HN2S02FU概述

high speed switching application

HN2S02FU规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
包装说明R-PDSO-G6
针数6
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性HIGH SPEED SWITCH
配置SEPARATE, 3 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-G6
元件数量3
端子数量6
最高工作温度125 °C
最低工作温度-40 °C
最大输出电流0.1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.2 W
认证状态Not Qualified
最大重复峰值反向电压45 V
最大反向电流5 µA
反向测试电压40 V
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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HN2S02FU
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
HN2S02FU
High Speed Switching Application
HN2S02FU is composed of 3 independent diodes.
Low forward voltage: V
F (3)
= 0.54V (typ.)
Low reverse current: I
R
= 5μA (max.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
P
T
j
T
stg
T
opr
Rating
45
40
300 *
100 *
1*
200 **
125
−55∼125
−40∼100
Unit
V
V
mA
mA
A
mW
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75
%
of the single diode one.
** :Total rating
JEDEC
JEITA
TOSHIBA
1-2T1C
Weight: 6.2mg(Typ.)
Electrical Characteristics
(Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
I
R
C
T
Test
Circuit
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 40V
V
R
= 0, f = 1MH
z
Min
Typ.
0.28
0.36
0.54
18
Max
0.60
5
V
Unit
μA
pF
1
2007-11-01

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