HN2E05J
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E05J
Super High Speed Switching Application
Interface Circuit
Driver Circuit Applications
Q1
Since bias resistor is built in the transistor, the miniaturization of
the apparatus by curtailment of the number of parts and laborsaving of
an assembly are possible.
Unit: mm
Q2
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
:V
F(3
)=0.98V(typ.)
:t
rr
=1.6ns(typ.)
:C
T
=0.5pF(typ.)
1.BASE
2.EMITTER
3.ANODE
4.CATHODE
5.COLLECTOR
Q1(Transistor)
Q2(Transistor)
:
:
RN2104F equivalent
1SS352 equivalent
SMV
Q1(Transistor) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
−50
−50
−10
−100
Unit
V
V
V
mA
JEDEC
JEITA
TOSHIBA
Weight:0.014g (typ.)
―
―
2-3L1E
Q2(Diode) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
Rating
85
80
200
100
1
Unit
V
V
mA
mA
A
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
300
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
* Total rating. 200mW per 1 element must not be exceeded.
1
2007-11-01
HN2E05J
Q1(Transistor)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
Test Condition
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −10
V, I
C
=
0
V
CE
= −5
V, I
C
= −10
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −0.2
V, I
C
= −5
mA
V
CE
= −5
V, I
C
= −0.1
mA
V
CE
= −10
V, I
C
= −5
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
⎯
⎯
Min
⎯
⎯
−0.082
80
⎯
−1.5
−1.0
⎯
⎯
32.9
0.9
Typ.
⎯
⎯
⎯
⎯
−0.1
⎯
⎯
200
3
47
1.0
Max
−100
−500
−0.15
⎯
−0.3
−5.0
−1.5
⎯
⎯
61.1
1.1
V
V
V
MHz
pF
kΩ
Unit
nA
mA
Q2(Diode)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
―
―
―
―
―
―
―
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
Min
―
―
―
―
―
―
―
Typ.
0.62
0.75
0.98
―
―
0.5
1.6
Max
―
―
1.20
0.1
0.5
―
―
μA
pF
ns
V
Unit
Marking
Equivalent Circuit
(Top View)
5
4
54
Q1
Q2
1
2
3
Fig.1 : Reverse Recovery Time (t
rr
) Test Circuit
2
2007-11-01
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