HN2E02F
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E02F
Super High Speed Switching Application
Audio Frequency Amplifier Application
AM Amplifier Application
Q1
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
:V
F(3
)=0.98V(typ.)
:t
rr
=1.6ns(typ.)
:C
T
=0.5pF(typ.)
:V
CEO
=50V
:I
C
=150mA(max.)
Unit: mm
Q2
High Voltage
High Collector Current
Good h
FE Linearity
:h
FE(
I
C
=0.1mA)/ h
FE(
I
C
=2mA) =0.95
Q1 (Diode)
Q2 (Transistor)
:
:
1SS352 Equivalent
2SC4738 Equivalent
1.Anode
2.Base
3.Collector
4.Emitter
5.NC
6.Cathode
Unit
V
V
mA
mA
A
Q1 (Diode) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Symbol
V
RM
V
R
I
FM
I
O
I
FSM
Rating
85
80
300
100
1
JEDEC
JEITA
TOSHIBA
―
―
2-3N1D
Weight: 0.015g (typ.)
Q2 (Transistor) Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
60
50
5
150
30
Unit
V
V
V
mA
mA
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
300
125
−55~125
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed 200mW per element.
1
2007-11-22
HN2E02F
Q1 (Diode)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
V
F (1)
Forward voltage
V
F (2)
V
F (3)
Reverse current
Total capacitance
Reverse recovery time
I
R (1)
I
R (2)
C
T
t
rr
Test
Circuit
―
―
―
―
―
―
―
Test Condition
I
F
= 1mA
I
F
= 10mA
I
F
= 100mA
V
R
= 30V
V
R
= 80V
V
R
= 0, f = 1MHz
I
F
= 10mA (fig.1)
Min
―
―
―
―
―
―
―
Typ.
0.62
0.75
0.98
―
―
0.5
1.6
Max
―
―
1.2
0.1
0.5
―
―
μA
pF
ns
V
Unit
Q2 (Transistor)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
Test Condition
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
I
C
=100mA, I
B
=10mA
V
CE
= 10V, I
C
=10mA
V
CB
= 10V, I
E
= 0,f=1MHz
Min
―
―
120
―
60
―
Typ.
―
―
―
0.1
―
2.0
Max
100
100
700
0.25
―
―
V
MHz
pF
Unit
nA
nA
* h
FE
Rank Y(Y) : 120~240, GR(G) : 200~400,BL(L) : 350~700
( ) Marking Symbol
Marking
Type Name
Equivalent Circuit
(Top View)
6
5
4
h
FE Rank
6
5
13Y
Q2
Q1
1
1
2
3
Fig. 1 : Reverse Recovery Time (t
rr
) Test Circuit
2
2007-11-22
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