HN7G08FE
TOSHIBA Multichip Discrete Device
HN7G08FE
General-Purpose Amplifier Applications
Switching and Muting Switch Applications
Q1
Low saturation voltage: V
CE (sat)
(1) =
−15
mV (typ.)
@I
C
=
−10
mA/I
B
=
−0.5
mA
Large collector current: I
C
=
−400
mA (max)
Unit: mm
Q1: 2SA1955F
Q2: RN1106F
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−15
−12
−5
−400
−50
Unit
V
V
V
mA
mA
(E1)
1. EMITTER1
(B1)
2. BASE1
3. COLLECTOR2 (C2)
(E2)
4. EMITTER2
(B2)
5. BASE2
6. COLLECTOR1 (C1)
JEDEC
JEITA
TOSHIBA
Weight: 0.003 g (typ.)
―
―
2-2J1E
Q2 Absolute Maximum Ratings (
Ta = 25°C
)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
5
100
Unit
V
V
V
mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
100
150
−55~150
Unit
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1
2007-11-01
HN7G08FE
Q1
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter
saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
(Note)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat) (1)
V
CE(sat) (2)
V
BE(sat)
f
T
C
ob
t
on
Test
Circuit
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
=
−15
V, I
E
= 0
V
EB
=− 5 V, I
C
= 0
V
CE
=− 2 V, I
C
=− 10 mA
I
C
=− 10 mA, I
B
=− 0.5 mA
I
C
=− 200 mA, I
B
=− 10 mA
I
C
=− 200 mA, I
B
=− 10 mA
V
CE
=− 2 V, I
C
=− 10 mA
V
CB
=− 10 V, I
E
= 0, f = 1 MHz
Min
―
―
300
―
―
―
―
―
⎯
Typ.
―
―
―
−15
−110
−0.87
130
4.2
40
Max
−100
−100
1000
−30
−250
−1.2
―
―
⎯
mV
V
MHz
pF
Unit
nA
nA
Switching time
Storage time
t
stg
―
⎯
280
⎯
ns
Fall time
t
f
―
I
B1
= −I
B2
=
5 mA
⎯
65
⎯
Note: h
FE
classification A(A): 300~600, B(B): 500~1000
( ) marking symbol
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I (ON)
V
I (OFF)
f
T
C
ob
Test
Circuit
―
―
―
―
―
―
―
―
―
―
―
Test Condition
V
CB
= 50 V, I
E
= 0
V
CE
=
50 V, I
B
=
0
V
EB
= 5 V, I
C
= 0
V
CE
= 5 V, I
C
= 10 mA
I
C
= 5 mA, I
B
= 0.25 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 0.1 mA
V
CE
= 10 V, I
C
= 5 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
―
―
Min
―
―
0.074
80
―
0.7
0.5
―
―
3.29
0.09
Typ.
―
―
―
―
0.1
―
―
250
3
4.7
0.1
Max
100
500
0.138
―
0.3
1.3
0.8
―
―
6.11
0.11
V
V
V
MHz
pF
kΩ
mA
Unit
nA
R1
R1/R2
Marking
Type Name
Equivalent Circuit
(Top View)
5
4
h
FE
Rank
6
6
5
4
Q2
76A
Q1
3
1
2
1
2
3
2
2007-11-01
HN7G08FE
Q1
-0.5
-6
COLLECTOR CURRENT IC (A)
-0.4
-0.3
IC - VCE
10000
-5
-4
DC CURRENT GAIN hFE
-3
-2
-1
IB=-0.5mA
1000
COMMON EMITTER
VCE = -2V
Ta = 100°C
25
hFE - IC
-0.2
-0.1
100
-25
COMMON EMITTER
Ta = 25°C
-
0
-1
-2
-3
-0.
0
-4
-5
COLLECTOR-EMITTER VOLTAGE VCE (V)
10
-
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (A)
-1000
COLLETOR EMITTER SATURATION
VOLTAGE VCE(sat.) (mV)
VCE(sat) - IC
BASES-EMITTER SATURATION
VOLTAGE VBE(sat.) (V)
COMMON EMITTER
IC/IB = 20
-10
VBE(sat) - IC
COMMON EMITTER
IC/IB = 20
Ta = 25
℃
-100
Ta = 100°C
-25
-10
25
-1
-1
-
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (A)
-
-0.1
-
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (A)
-1000
COLLECTOR CURRENT IC (mA)
IC - VBE
100
COLLECTOR OUTPUT CAPACITNCE
Cob (pF)
Cob - VCB
IE = 0
f = 1MHz
Ta = 25
℃
-100
Ta = 100°C
-25
10
-10
25
COMMON EMITTER
VCE = -2V
-1
0
-0.4
-0.8
-1.2
-1.6
1
-
-0.1
-1
-10
-100
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-BASE VOLTAGE VCB (V)
3
2007-11-01
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