HN7G07FU
TOSHIBA Multichip Discrete Device
HN7G07FU
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
•
Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SC5376F equivalent
Q2: RN1115F equivalent
Unit: mm
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
15
12
5
500
50
Unit
V
V
V
mA
mA
1
.
EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
10
100
Unit
V
V
V
mA
JEDEC
JEITA
TOSHIBA
―
―
2-2J1A
Weight: 0.0068 g (typ.)
Marking
Type Name
hFE Rank
75A
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Equivalent Circuit
(top view)
6
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating. 130 mW per element should not be exceeded.
Note:
5
4
Q2
Q1
1
2
3
1
2007-11-01
HN7G07FU
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
**
V
CE (sat) (1)
V
CE (sat) (2)
V
BE (sat)
f
T
C
ob
t
on
0V
Switching time
Storage time
t
stg
INPUT 300
Ω
10
μs
600
Ω
50
Ω
Test Condition
V
CB
=
15 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
10 mA
I
C
=
10 mA, I
B
=
0.5 mA
I
C
=
200 mA, I
B
=
10 mA
I
C
=
200 mA, I
B
=
10 mA
V
CE
=
2 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
OUTPUT
60
Ω
Min
⎯
⎯
300
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
15
110
0.87
130
4.2
85
Max
100
100
1000
30
250
1.2
⎯
⎯
⎯
mV
V
MHz
pF
ns
Unit
nA
nA
V
CC
=
6 V
⎯
170
⎯
ns
V
BB
=
3 V
Fall time
t
f
Duty cycle
<
2%
=
IB1
=
IB2
=
5 mA
⎯
40
⎯
ns
**: h
FE
Classification
A:300~600, B:500~1000
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I(ON)
V
I(OFF)
f
T
C
ob
R1
R1/R2
Test Condition
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
E
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
⎯
Min
⎯
⎯
0.37
50
⎯
0.7
0.3
⎯
⎯
1.54
⎯
Typ.
⎯
⎯
⎯
⎯
0.1
⎯
⎯
250
3
2.2
0.22
Max
100
500
0.71
⎯
0.3
2.5
1.0
⎯
⎯
2.86
⎯
V
V
V
MHz
pF
kΩ
Unit
nA
nA
mA
2
2007-11-01
HN7G07FU
Q1
I
C
– V
CE
1.0
Common emitter
Ta
=
25°C
0.8
10000
5000
3000
h
FE
– I
C
Common emitter
VCE
=
2 V
(A)
5
4
3
2
DC current gain h
FE
6
0.6
Collector current I
C
1000
500
300
Ta
=
100°C
25
−25
0.4
1
0.2
IB
=
0.5 mA
0
0
100
50
30
1
2
3
4
5
10
0.1
0.3
1
3
10
30
100
300
1000
Collector-emitter voltage
V
CE
(V)
Collector current I
C
(mA)
V
CE (sat)
– I
C
1000
Common emitter
500 I /I
=
20
C B
300
50
30
Common emitter
IC/IB
=
20
Ta
=
25°C
10
5
3
V
BE (sat)
– I
C
Collector-emitter saturation voltage
V
CE (sat)
(mV)
100
50
30
Ta
=
100°C
−25
25
Base-emitter saturation voltage
V
BE (sat)
(V)
100
300
1000
10
5
3
1
0.5
0.3
1
0.1
0.3
1
3
10
30
0.1
0.1
0.3
1
3
10
30
100
300 500
Collector current I
C
(mA)
Collector current I
C
(mA)
I
C
– V
BE
1000
500
300
100
C
ob
– V
CB
IE
=
0 A
f
=
1 MHz
Ta
=
25°C
V
CE
=
2 V
Collector output capacitance C
ob
(pF)
1.6
Common emitter
50
30
(mA)
Collector current I
C
100
50
30
Ta
=
100°C
25
−25
10
5
3
10
5
3
1
0.0
0.4
0.8
1.2
1
0.1
0.3
1
3
10
30
100
Base-emitter voltage
V
BE
(V)
Collector-base voltage V
CB
(V)
3
2007-11-01
HN7G07FU
Q2
COLLECTOR CURRENT IC (mA)
EMITTER
COMMON
VCE=0.2V
COLLECTOR CURRENT IC (uA)
EMITTER
COMMON
VCE=5V
INPUT VOLTAGE
VI(ON) (V)
INPUT VOLTAGE
VI(OFF) (V)
EMITTER
COMMON
VCE=5V
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat)(V)
DC CURRENT GAIN hFE
EMITTER
COMMON
IC/IB =20
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
4
2007-11-01
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