HN7G06FU
TOSHIBA Multichip Discrete Device
HN7G06FU
•
Power Management Switch Applications, Inverter
Circuit Applications, Driver Circuit Applications and
Interface Circuit Applications
•
Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SA1955F equivalent
Q2: RN1104F equivalent
Unit: mm
Q1 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−15
−12
−5
−500
−50
Unit
V
V
V
mA
mA
1.EMITTER1
2.BASE1
3.COLLECTOR2
4.EMITTER2
5.BASE2
6.COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
Q2 Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
50
50
10
100
Unit
V
V
V
mA
JEDEC
JEITA
TOSHIBA
―
―
2-2J1A
Weight: 0.0068 g (typ.)
Marking
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
P
C
*
T
j
T
stg
Rating
200
150
−55~150
Unit
mW
°C
°C
Type Name
hFE Rank
74A
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating. 130 mW per element should not be exceeded.
Note:
Equivalent
Circuit
6
5
4
Q1
Q2
1
2
3
1
2007-11-01
HN7G06FU
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
**
V
CE (sat)(1)
V
CE (sat)(2)
V
BE (sat)
f
T
C
ob
Test Condition
V
CB
= −15
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −10
mA
I
C
= −10
mA, I
B
= −0.5
mA
I
C
= −200
mA, I
B
= −10
mA
I
C
= −200
mA, I
B
= −10
mA
V
CE
= −2
V, I
C
= −10
mA
V
CB
= −10
V, I
E
=
0,
f
=
1 MHz
Min
⎯
⎯
300
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
−15
−110
−0.87
130
4.2
Max
−100
−100
1000
−30
−250
−1.2
⎯
⎯
mV
V
MHz
pF
Unit
nA
nA
Turn-on time
t
on
0V
INPUT 300
Ω
600
Ω
50
Ω
OUTPUT
60
Ω
⎯
40
⎯
ns
Switching time
Storage time
t
stg
10
μs
Fall time
t
f
Duty cycle
<
2%
=
IB1
= −IB2 = −5
mA
V
BB
=
3V
V
CC
= −6
V
⎯
280
⎯
ns
⎯
65
⎯
ns
**: h
FE
Classification
A:300~600, B:500~1000
Q2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
I
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I(ON)
V
I(OFF)
f
T
C
ob
R1
R1/R2
Test Condition
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
E
=
0
V
EB
=
10 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
0.2 V, I
C
=
5 mA
V
CE
=
5 V, I
C
=
0.1 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
⎯
Min
⎯
⎯
0.082
80
⎯
1.5
1.0
⎯
⎯
32.9
0.9
Typ.
⎯
⎯
⎯
⎯
0.1
⎯
⎯
250
3
47
1.0
Max
100
500
0.15
⎯
0.3
5.0
1.5
⎯
⎯
61.1
1.1
V
V
V
MHz
pF
kΩ
Unit
nA
nA
mA
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
2
2007-11-01
HN7G06FU
Q1
IC - VCE
-6
COLLECTOR CURRENT IC (A)
-0.4
-0.3
10000
-5
-4
DC CURRENT GAIN hFE
-3
-2
-1
IB=-0.5mA
1000
COMMON EMITTER
VCE = -2V
Ta = 100°C
25
hFE - IC
-0.5
-0.2
-0.1
100
-25
COMMON EMITTER
Ta = 25°C
-
0
-1
-2
-3
-0.
0
-4
-5
COLLECTOR-EMITTER VOLTAGE VCE (V)
10
-
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (A)
-1000
COLLETOR EMITTER SATURATION
VOLTAGE VCE(sat.) (mV)
VCE(sat) - IC
BASES-EMITTER SATURATION
VOLTAGE VBE(sat.) (V)
COMMON EMITTER
IC/IB = 20
-10
VBE(sat) - IC
COMMON EMITTER
IC/IB = 20
Ta = 25
℃
-100
Ta = 100°C
-25
-10
25
-1
-1
-
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (A)
-
-0.1
-
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC (A)
-1000
COLLECTOR CURRENT IC (mA)
IC - VBE
100
COLLECTOR OUTPUT CAPACITNCE
Cob (pF)
Cob - VCB
IE = 0
f = 1MHz
Ta = 25
℃
-100
Ta = 100°C
-25
10
-10
25
COMMON EMITTER
VCE = -2V
-1
0
-0.4
-0.8
-1.2
-1.6
1
-
-0.1
-1
-10
-100
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-BASE VOLTAGE VCB (V)
3
2007-11-01
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