BYS11-90
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
1.5 A
90 V
40 A
0.75 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Junction and storage temperature range
8.3 ms
10 ms
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
BYS11-90
BYS
109
90
1.5
40
30
10 000
- 55 to + 150
V
A
A
V/µs
°C
UNIT
Document Number: 86014
Revision: 21-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
BYS11-90
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
(1)
Maximum DC reverse current
(1)
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
1.0 A
V
RRM
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
V
F
I
R
BYS11-90
750
100
1
UNIT
mV
µA
mA
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance - junction lead
Maximum thermal resistance - junction ambient
Notes:
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm
2
35 µm Cu
(3) Mounted on Al-oxide-ceramic (Al
2
O
3
), 50 mm
2
35 µm Cu
SYMBOL
R
θJL
R
θJA
BYS11-90
25
150
(1)
125
(2)
100
(3)
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYS11-90-E3/TR
BYS11-90-E3/TR3
BYS11-90HE3/TR
(1)
BYS11-90HE3/TR3
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
TR
TR3
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
T
J
= 150 °C
2.0
V
R
=
V
RRM
, Half Sine-Wave, R
thJA
= 25 K/W
Average Forward Current (A)
1.6
Forward Current (A)
1
1.2
0.1
T
J
= 25 °C
0.01
0.8
0.4
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0
0
40
80
120
160
200
Forward
Voltage
(V)
Ambient Temperature (°C)
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Max. Average Forward Current vs. Ambient Temperature
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 86014
Revision: 21-Jan-08
BYS11-90
Vishay General Semiconductor
2.0
2.0
Max. Reverse Power Dissipation (W)
V
R
= 0
V,
Half Sine-Wave
R
thJA
= 25 K/W
1.6
Average Forward Current (A)
1.6
R
thJA
= 25 K/W
1.2
1.2
100 K/W
0.8
125 K/W
0.4
100 K/W
0.8
0.4
V
R
=
V
RRM
0
0
40
80
120
100
200
150 K/W
0
0
40
80
120
160
200
Ambient Temperature (°C)
Junction Temperature (°C)
Figure 3. Max. Average Forward Currentvs. Ambient Temperature
Figure 5. Max Reverse Power Dissipation vs. Junction Temperature
1000
V
R
=
V
RRM
100
180
160
f = 1 MHz
Diode Capacitance (pF)
0
40
80
120
160
200
Reverse Current (mA)
140
120
100
80
60
40
20
10
1
0.1
0
0.1
1
10
100
Junction Temperature (°C)
Reverse
Voltage
(V)
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 86014
Revision: 21-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1