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MH4V64AXJJ-5

产品描述fast page mode 268435456-bit (4194304-word BY 64-bit)dynamic ram
产品类别存储    存储   
文件大小217KB,共25页
制造商Mitsubishi(日本三菱)
官网地址http://www.mitsubishielectric.com/semiconductors/
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MH4V64AXJJ-5概述

fast page mode 268435456-bit (4194304-word BY 64-bit)dynamic ram

MH4V64AXJJ-5规格参数

参数名称属性值
厂商名称Mitsubishi(日本三菱)
零件包装代码MODULE
包装说明,
针数144
Reach Compliance Codeunknow
ECCN代码EAR99
最长访问时间50 ns
JESD-30 代码R-XDMA-N144
内存密度268435456 bi
内存集成电路类型DRAM MODULE
内存宽度64
功能数量1
端口数量1
端子数量144
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
组织4MX64
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
认证状态Not Qualified
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装NO
技术CMOS
端子形式NO LEAD
端子位置DUAL

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Preliminary
Some of contents are subject
to change without notice.
MITSUBISHI LSIs
MH4V64/644AXJJ-5,-6,-5S,-6S
FAST PAGE MODE 268435456-BIT (4194304-WORD BY 64-BIT)DYNAMIC RAM
DESCRIPTION
This is family of 4194304 - word by 64 - bit dynamic RAM
module. This consists of four industry standard 4Mx16 dynamic
RAMs in TSOP and one industry EEPROM in TSSOP.
The mounting of TSOP on a card edge dual in line package
provides any application where high densities and large of
quantities memory are required.
This is a socket-type memory module,suitable for easy
interchange of addition of modules.
ADDRESS
Part No.
MH4V64AXJJ
MH4V644AXJJ
Row Add. Col Add.
A0~A12
A0~A11
Refresh
/RAS only Ref,Normal R/W
/RAS only Ref,Normal R/W
CBR Ref,Hidden Ref
A0~A8
CBR Ref,Hidden Ref
A0~A9
Refresh
Cycle
8192/64ms
4096/64ms
4096/64ms
APPLICATION
Main memory unit for computer,Microcomputer
memory,Refresh memory for CRT.
*:Applicable to self refresh version(MH4V64/644AXJJ-5S,-6S)
only
FEATURES
RAS
CAS Address
OE
access access access access Cycle
time
time
time
time
time (min.ns)
(max.ns) (max.ns) (max.ns) (max.ns)
MH4V64AXJJ-5,5S
MH4V64AXJJ-6,6S
MH4V644AXJJ-5,5S
MH4V644AXJJ-6,6S
50
60
50
60
13
15
13
15
25
30
25
30
13
15
13
15
90
110
90
110
single 3.3V± 0.3V supply
Low stand-by power dissipation
7.2mW- - - - - - - - - LVCMOS input level
operating power dissipation
MH4V64AXJJ-5,5S - - - - - 1584 mW(max.)
MH4V64AXJJ-6,6S - - - - - 1440mW(max.)
MH4V644AXJJ-5,5S - - - - 2016 mW(max.)
MH4V644AXJJ-6,6S - - - - 1872 mW(max.)
Self refresh capability*
Self refresh current - - - - 1600 uA(max.)
All input, output LVTTL compatible and low capacitance
Utilizes industry standard 4Mx16 RAMs in TSOP
and industry standard EEPROM in TSSOP.
Includes decoupling capacitor(0.22uFx4)
Fast page mode , Read-modify-write,
CAS before RAS refresh,Hidden refresh capabilities.
Early-write mode,OE to control output buffer
impedance.
MIT-DS-0072-0.5
MITSUBISHI
ELECTRIC
( 1 / 25 )
26/Feb./1997

MH4V64AXJJ-5相似产品对比

MH4V64AXJJ-5 MH4V64AXJJ MH4V644AXJJ MH4V644AXJJ-5 MH4V64AXJJ-5S MH4V644AXJJ-5S MH4V64AXJJ-6 MH4V644AXJJ-6 MH4V64AXJJ-6S MH4V644AXJJ-6S
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