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5962F9862401VCC: 产品描述AC SERIES, QUAD 2-INPUT OR GATE, CDIP14, SIDE BRAZED, CERAMIC, DIP-14; 产品类别逻辑逻辑; 文件大小49KB，共2页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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5962F9862401VCC概述

AC SERIES, QUAD 2-INPUT OR GATE, CDIP14, SIDE BRAZED, CERAMIC, DIP-14

5962F9862401VCC规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Renesas(瑞萨电子)
零件包装代码	DIP
包装说明	DIP-14
针数	14
Reach Compliance Code	not_compliant
系列	AC
JESD-30 代码	R-CDIP-T14
JESD-609代码	e0
负载电容（CL）	50 pF
逻辑集成电路类型	OR GATE
最大I（ol）	0.012 A
功能数量	4
输入次数	2
端子数量	14
最高工作温度	125 °C
最低工作温度	-55 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	DIP
封装等效代码	DIP14,.3
封装形状	RECTANGULAR
封装形式	IN-LINE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
Prop。Delay @ Nom-Sup	12 ns
传播延迟（tpd）	12 ns
认证状态	Not Qualified
施密特触发器	NO
筛选级别	MIL-PRF-38535 Class V
座面最大高度	5.08 mm
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
总剂量	300k Rad(Si) V
宽度	7.62 mm
Base Number Matches	1

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ACS32MS

Data Sheet

November 1998

File Number

4545

Radiation Hardened Quad 2-Input OR Gate

The Radiation Hardened ACS32MS is a Quad 2-Input OR

Gate. For each gate, a HIGH level on either A or B input

results in a HIGH level on the Y output. A LOW level on both

the A and B inputs results in a LOW level on the Y output. All

inputs are buffered and the outputs are designed for

balanced propagation delay and transition times.

The ACS32MS is fabricated on a CMOS Silicon on Sapphire

(SOS) process, which provides an immunity to Single Event

Latch-up and the capability of highly reliable performance in

any radiation environment. These devices offer signiﬁcant

power reduction and faster performance when compared to

ALSTTL types.

Speciﬁcations for Rad Hard QML devices are controlled

by the Defense Supply Center in Columbus (DSCC). The

SMD numbers listed below must be used when ordering.

Detailed Electrical Speciﬁcations for the ACS32MS are

contained in SMD 5962-98624. A “hot-link” is provided

on our homepage with instructions for downloading.

www.intersil.com/data/sm/index.asp

Features

• QML Qualiﬁed Per MIL-PRF-38535 Requirements

• 1.25 Micron Radiation Hardened SOS CMOS

• Radiation Environment

- Latch-Up Free Under any Conditions

- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 10

RAD (Si)

- SEU Immunity . . . . . . . . . . . . . <1 x 10

-10

Errors/Bit/Day

- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm

)

• Input Logic Levels . . . . V

= (0.3)(V

), V

= (0.7)(V

)

• Output Current . . . . . . . . . . . . . . . . . . . . . . . .

±8mA

(Min)

• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)

• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 12ns (Max)

Applications

• High Speed Control Circuits

• Sensor Monitoring

• Low Power Designs

Ordering Information

ORDERING NUMBER

5962F9862401VCC

ACS32D/SAMPLE-03

5962F9862401VXC

ACS32K/SAMPLE-03

5962F9862401V9A

INTERNAL MKT. NUMBER

ACS32DMSR-03

ACS32D/SAMPLE-03

ACS32KMSR-03

ACS32K/SAMPLE-03

ACS32HMSR-03

TEMP. RANGE (

-55 to 125

PACKAGE

14 Ld SBDIP

14 Ld Flatpack

Die

DESIGNATOR

CDIP2-T14

CDFP4-F14

N/A

Pinouts

ACS32MS

(SBDIP)

TOP VIEW

A1 1

B1 2

Y1 3

A2 4

B2 5

Y2 6

GND 7

14 V

13 B4

12 A4

11 Y4

10 B3

9 A3

8 Y3

ACS32MS

(FLATPACK)

TOP VIEW

GND

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

5962F9862401VCC相似产品对比

	5962F9862401VCC	5962F9862401VXC	5962F9862401V9A
描述	AC SERIES, QUAD 2-INPUT OR GATE, CDIP14, SIDE BRAZED, CERAMIC, DIP-14	AC SERIES, QUAD 2-INPUT OR GATE, CDFP14	QUAD 2-INPUT OR GATE, UUC14
零件包装代码	DIP	DFP	DIE
包装说明	DIP-14	DFP, FL14,.3	DIE,
针数	14	14	16
Reach Compliance Code	not_compliant	not_compliant	unknown
系列	AC	AC	AC
JESD-30 代码	R-CDIP-T14	R-CDFP-F14	R-XUUC-N16
JESD-609代码	e0	e0	e0
逻辑集成电路类型	OR GATE	OR GATE	OR GATE
功能数量	4	4	4
输入次数	2	2	2
端子数量	14	14	16
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED
封装代码	DIP	DFP	DIE
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	FLATPACK	UNCASED CHIP
传播延迟（tpd）	12 ns	12 ns	12 ns
认证状态	Not Qualified	Not Qualified	Not Qualified
筛选级别	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V
表面贴装	NO	YES	YES
技术	CMOS	CMOS	CMOS
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	TIN LEAD
端子形式	THROUGH-HOLE	FLAT	NO LEAD
端子位置	DUAL	DUAL	UPPER
总剂量	300k Rad(Si) V	300k Rad(Si) V	300k Rad(Si) V
Base Number Matches	1	1	1
是否Rohs认证	不符合	不符合	-
厂商名称	Renesas(瑞萨电子)	-	Renesas(瑞萨电子)
负载电容（CL）	50 pF	50 pF	-
最大I（ol）	0.012 A	0.012 A	-
最高工作温度	125 °C	125 °C	-
最低工作温度	-55 °C	-55 °C	-
封装等效代码	DIP14,.3	FL14,.3	-
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-
电源	5 V	5 V	-
Prop。Delay @ Nom-Sup	12 ns	12 ns	-
施密特触发器	NO	NO	-
座面最大高度	5.08 mm	2.92 mm	-
标称供电电压 (Vsup)	5 V	5 V	-
温度等级	MILITARY	MILITARY	-
端子节距	2.54 mm	1.27 mm	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-
宽度	7.62 mm	6.285 mm	-

5962F9862401VCC

5962F9862401VCC概述

5962F9862401VCC规格参数

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