40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
• Al
2
O
3
DBC
• Optional SMD thermistor (NTC)
MTP
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
PRODUCT SUMMARY
V
CES
V
CE(on)
typical at V
GE
= 15 V
I
C
at T
C
= 25 °C
1200 V
3.36 V
80 A
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation (only IGBT)
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 100 °C
T
C
= 105 °C
T
C
= 25 °C
T
C
= 104 °C
TEST CONDITIONS
MAX.
1200
80
40
160
A
160
21
160
± 20
V
2500
463
W
185
UNITS
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94507
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter
breakdown voltage
Temperature coefficient of
breakdown voltage
SYMBOL
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C)
V
GE
= 15 V, I
C
= 40 A
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 80 A
V
GE
= 15 V, I
C
= 40 A, T
J
= 150 °C
V
GE
= 15 V, I
C
= 80 A, T
J
= 150 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Transconductance
V
GE(th)
V
GE(th)
/ΔT
J
g
fe
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
CE
= 50 V, I
C
= 40 A, PW = 80 μs
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C
Zero gate voltage collector current
I
CES
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V
MIN.
1200
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+ 1.1
3.36
4.53
3.88
5.35
-
- 12
35
-
0.4
0.2
-
MAX.
-
-
3.59
4.91
4.10
5.68
6
-
-
250
1.0
mA
10
± 250
nA
mV/°C
S
μA
V
UNITS
V
V/°C
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
RBSOA
I
C
= 40 A
V
CC
= 600 V
V
GE
= 15 V
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5
Ω,
L = 200 μH, T
J
= 25 °C,
energy losses include tail and diode
reverse recovery
V
CC
= 600 V, I
C
= 40 A, V
GE
= 15 V,
R
g
= 5
Ω,
L = 200 μH, T
J
= 125 °C,
energy losses include tail and diode
reverse recovery
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
T
J
= 150 °C, I
C
= 160 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5
Ω,
V
GE
= + 15 V to 0 V
T
J
= 150 °C,
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5
Ω,
V
GE
= + 15 V to 0 V
10
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
399
43
187
1.14
1.35
2.49
1.60
1.62
3.22
5521
380
171
Fullsquare
MAX.
599
65
281
1.71
2.02
3.73
mJ
2.40
2.43
4.82
8282
570
257
pF
nC
UNITS
Short circuit safe operating area
SCSOA
-
-
μs
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94507
Revision: 01-Mar-10
40MT120UHAPbF, 40MT120UHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Ultrafast NPT IGBT), 80 A
DIODE SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
I
C
= 40 A
I
C
= 80 A
Diode forward voltage drop
V
FM
I
C
= 40 A, T
J
= 125 °C
I
C
= 80 A, T
J
= 125 °C
I
C
= 40 A, T
J
= 150 °C
Reverse recovery energy of the diode
Diode reverse recovery time
Peak reverse recovery current
E
rec
t
rr
I
rr
V
GE
= 15 V, R
g
= 5
Ω,
L = 200 μH
V
CC
= 600 V, I
C
= 40 A
T
J
= 125 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
TYP.
2.98
3.90
3.08
4.29
3.12
574
120
43
MAX.
3.38
4.41
3.39
4.72
3.42
861
180
65
μJ
ns
A
V
UNITS
THERMISTOR SPECIFICATIONS
(40MT120UHTAPbF only)
PARAMETER
Resistance
Sensitivity index of the
thermistor material
Notes
(1)
T , T are thermistor´s temperatures
0
1
(2)
SYMBOL
R
0 (1)
β
(1)(2)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
TEST CONDITIONS
MIN.
-
-
TYP.
30
4000
MAX.
-
-
UNITS
kΩ
K
R
0
1
1
------
=
exp
β
⎛
-----
–
-----
⎞
, temperature in Kelvin
-
⎝
T
-
T
-
⎠
R
1
0
1
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
IGBT
Junction to case
Diode
Case to sink per module
Clearance
(1)
Creepage
(2)
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
SYMBOL
T
J
T
Stg
TEST CONDITIONS
MIN.
- 40
- 40
-
-
-
5.5
8
TYP.
-
-
-
-
0.06
-
-
MAX.
150
°C
125
0.29
0.61
-
-
mm
-
°C/W
UNITS
Mounting torque to heatsink
Weight
3 ± 10 %
66
Nm
g
Document Number: 94507
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
100
1000
80
100
60
IC (A)
40
IC (A)
10
20
0
0
20
40
60
80
100 120 140 160
T C (°C)
1
10
100
VCE (V)
1000
10 000
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 4 - Reverse BIAS SOA
T
J
= 150 °C; V
GE
= 15 V
160
VGE = 18V
140
120
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
600
500
400
100
PD (W)
300
200
100
0
0
20
40
60
80
100 120 140 160
T C (°C)
ICE (A)
80
60
40
20
0
0
2
4
VCE (V)
6
8
10
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 5 - Typical IGBT Output Characteristics
T
J
= - 40 °C; t
p
= 80 μs
160
140
1000
100
120
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
10
IC (A)
10 μs
100 μs
80
60
40
20
1
10ms
0.1
DC
0.01
1
10
100
VCE (V)
1000
10000
0
0
2
4
6
VCE (V)
8
10
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
≤
150 °C
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 μs
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94507
Revision: 01-Mar-10
40MT120UHAPbF, 40MT120UHTAPbF
"Half Bridge" IGBT MTP
Vishay High Power Products
(Ultrafast NPT IGBT), 80 A
160
VGE = 18V
140
120
100
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
18
16
14
ICE = 80A
ICE = 40A
ICE = 20A
V CE (V)
0
2
4
VCE (V)
6
8
10
ICE (A)
12
10
8
6
4
80
60
40
20
0
2
0
5
10
V GE (V)
15
20
Fig. 7 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 80 μs
20
-40°C
25°C
125°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25 °C
120
100
80
18
16
14
V CE (V)
ICE = 80A
ICE = 40A
ICE = 20A
12
10
8
6
4
2
IF (A)
60
40
20
0
0.0
1.0
2.0
3.0
VF (V)
4.0
5.0
0
5
10
V GE (V)
15
20
Fig. 8 - Typical Diode Forward Characteristics
t
p
= 80 μs
20
18
16
14
V CE (V)
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125 °C
350
ICE = 80A
ICE = 40A
ICE = 20A
300
250
ICE (A)
T J = 25°C
T J = 125°C
12
10
8
6
4
2
0
5
10
V GE (V)
15
20
200
150
100
50
0
0
5
10
VGE (V)
15
20
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= - 40 °C
Fig. 12 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
Document Number: 94507
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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