Bulletin PD-21154 rev. A 11/06
121NQ045PbF
SCHOTTKY RECTIFIER
120Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
V
F
T
J
@ tp = 5
μs
sine
@120Apk, T
J
=125°C
range
Description/ Features
Units
A
V
A
V
°C
The 121NQ.. high current Schottky rectifier module series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are in
high current switching power supplies, plating power supplies,
UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175 °C T
J
operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free
Values
120
45
16000
0.6
- 55 to 175
Case Styles
HALF-PAK (D-67)
Document Number: 94127
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1
121NQ045PbF
Bulletin PD-21154 rev. A
11/06
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
121NQ045PbF
45
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
E
AS
Non-Repetitive Avalanche Energy
I
AR
Repetitive Avalanche Current
16000
2000
81
13
A
mJ
A
5μs Sine or 3μs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
121NQ
120
Units Conditions
A
50% duty cycle @ T
C
= 137 °C, rectangular wave form
T
J
= 25 °C, I
AS
= 13 Amps, L = 1 mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
121NQ
0.65
0.82
0.6
0.76
10
90
5200
7.0
10000
Units
V
V
V
V
mA
mA
pF
nH
V/
μs
@ 120A
@ 240A
@ 120A
@ 240A
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current
* See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width = 500μs
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
121NQ
-55 to 175
-55 to 175
0.38
0.05
30 (1.06)
Min.
Max.
Min.
Max.
3 (26.5)
4 (35.4)
3.4 (30)
5 (44.2)
Units
°C
°C
°C/W
°C/W
g (oz.)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
MountingTorque
TerminalTorque
Case Style
DCoperation
* See Fig. 4
Mounting surface , smooth and greased
Non-lubricated threads
Nm
(Ibf-in)
HALF PAK Module
Document Number: 94127
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121NQ045PbF
Bulletin PD-21154 rev. A
11/06
1000
1000
Tj = 175˚C
100
Reverse Current - I
R
(mA)
150˚C
125˚C
100˚C
10
1
0.1
0.01
0.001
0
5
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
100
10 15 20 25 30 35 40 45
Reverse Voltage - V
R
(V)
Tj = 175°C
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
Tj = 25˚C
Tj = 25°C
1
0.0
0.3
0.6
0.9
1.2
1.5
1.8
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
1
1000
0
10
20
30
40
Reverse Voltage - V
R
(V)
50
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.50
0.1
D = 0.33
D = 0.25
D = 0.20
0.01
Single Pulse
(Thermal Resistance)
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Document Number: 94127
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121NQ045PbF
Bulletin PD-21154 rev. A
11/06
140
180
Allowable Case Temperature (°C)
160
Average Power Loss (Watts)
120
100
80
60
40
20
0
DC
140
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
DC
120
Square wave (D=0.50)
80% rated Vr applied
see note (2)
80
0
40
80
120
160
200
240
100
0
20
40
60
80 100 120 140 160 18
Average Forward Current - I
F (AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
Average Forward Current - I
F (AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
10000
1000
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
L
HIGH-S
PEED
S CH
WIT
FREE-WHEEL
DIODE
40HF
L40S
02
Vd = 25 Volt
DUT
IR P460
F
R = 25 ohm
g
+
CURR
ENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
Document Number: 94127
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121NQ045PbF
Bulletin PD-21154 rev. A
11/06
Outline Table
HALF-PAK (D-67)
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
12
1
1
2
N
3
Q
4
045 PbF
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Average Current Rating (x 10)
Product Silicon Identification
N = NOt Isolated
Q = Schottky Rectifier Diode
Voltage Rating (045 = 45V)
Lead-Free
Document Number: 94127
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