20MT120UFP
Vishay High Power Products
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery
• Low diode V
F
• Square RBSOA
MTP
• Aluminum nitride DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
CES
I
C
at T
C
= 25 °C
V
CE(on)
1200 V
40 A
3.29 V
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation (only IGBT)
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
T
C
= 106 °C
T
C
= 25 °C
T
C
= 106 °C
TEST CONDITIONS
MAX.
1200
40
20
100
A
100
25
100
± 20
V
2500
240
W
96
UNITS
V
Document Number: 94505
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
20MT120UFP
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of breakdown voltage
SYMBOL
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C)
V
GE
= 15 V, I
C
= 20 A
V
GE
= 15 V, I
C
= 40 A
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 20 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 40 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 20 A, T
J
= 150 °C
Gate threshold voltage
Temperature coefficient of threshold voltage
Transconductance
V
GE(th)
V
GE(th)
/ΔT
J
g
fe
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 3 mA (25 °C to 125 °C)
V
CE
= 50 V, I
C
= 20 A, PW = 80 μs
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C
Zero gate voltage collector current
I
CES (1)
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C
Gate to emitter leakage current
Note
(1)
I
CES
includes also opposite leg overall leakage
I
GES
V
GE
= ± 20 V
MIN.
1200
-
-
-
-
-
-
4
-
-
-
-
-
-
TYP.
-
+ 1.3
3.29
4.42
3.87
5.32
3.99
-
- 14
17.5
-
0.7
2.9
-
MAX.
-
-
3.59
4.66
4.11
V
5.70
4.27
6
-
-
250
3.0
mA
9.0
± 250
nA
mV/°C
S
μA
UNITS
V
V/°C
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
RBSOA
TEST CONDITIONS
I
C
= 20 A
V
CC
= 600 V
V
GE
= 15 V
V
CC
= 600 V, I
C
= 20 A, V
GE
= 15 V,
R
g
= 5
Ω,
L = 1 mH, T
J
= 25 °C,
energy losses include tail and
diode reverse recovery
V
CC
= 600 V, I
C
= 20 A, V
GE
= 15 V,
R
g
= 5
Ω,
L = 1 mH, T
J
= 125 °C,
energy losses include tail and
diode reverse recovery
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
T
J
= 150 °C, I
C
= 120 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5
Ω,
V
GE
= + 15 V to 0 V
T
J
= 150 °C
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5
Ω,
V
GE
= + 15 V to 0 V
10
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
176
19
89
0.92
0.46
1.38
1.29
0.81
2.1
2530
344
78
Fullsquare
MAX.
264
30
134
-
-
-
mJ
-
-
-
3790
516
117
pF
nC
UNITS
Short circuit safe operating area
SCSOA
-
-
μs
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94505
Revision: 01-Mar-10
20MT120UFP
"Full Bridge" IGBT MTP
Vishay High Power Products
(Ultrafast NPT IGBT), 40 A
DIODE SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
I
C
= 20 A
I
C
= 40 A
Diode forward voltage drop
V
FM
I
C
= 20 A, T
J
= 125 °C
I
C
= 40 A, T
J
= 125 °C
I
C
= 20 A, T
J
= 150 °C
Reverse recovery energy of the diode
Diode reverse recovery time
Peak reverse recovery current
E
rec
t
rr
I
rr
V
GE
= 15 V, R
g
= 5
Ω,
L = 200 μH
V
CC
= 600 V, I
C
= 20 A
T
J
= 125 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
TYP.
2.48
3.28
2.44
3.45
2.21
420
98
33
MAX.
2.94
3.90
2.84
4.14
2.93
630
150
50
μJ
ns
A
V
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
IGBT
Junction to case
Diode
Case to sink per module
Clearance
Creepage
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
External shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
SYMBOL
T
J
T
Stg
TEST CONDITIONS
MIN.
- 40
- 40
-
-
-
5.5
8
TYP.
-
-
0.35
0.40
0.06
-
-
MAX.
150
°C
125
0.52
0.61
-
-
mm
-
°C/W
UNITS
Mounting torque
Weight
3 ± 10 %
66
Nm
g
Document Number: 94505
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
20MT120UFP
Vishay High Power Products
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
50
1000
40
100
30
IC (A)
20
10
10
0
0
20
40
60
80
100 120 140 160
T C (°C)
IC (A)
1
10
100
VCE (V)
1000
10 000
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 4 - Reverse Bias SOA
T
J
= 150 °C; V
GE
= 15 V
100
VGE = 18V
VGE
VGE
VGE
VGE
= 15V
= 12V
= 10V
= 8.0V
250
200
80
Ptot ( W )
I C E ( A)
150
60
100
40
50
20
0
0
20
40
60
80
100
120 140
160
T C (°C)
0
0
2
4
6
VCE (V)
8
10
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 5 - Typical IGBT Output Characteristics
T
J
= - 40 °C; t
p
= 80 μs
100
VGE = 18V
80
VGE
VGE
VGE
VGE
= 15V
= 12V
= 10V
= 8.0V
1000
100
10 μs
100 μs
1
1ms
DC
IC E ( A )
10
60
IC (A)
40
0.1
20
0.01
1
10
100
VCE (V)
1000
10000
0
0
2
4
6
V CE (V)
8
10
Fig. 3 - Forward SOA
T
C
= 25 °C; T
J
≤
150 °C
Fig. 6 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 μs
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94505
Revision: 01-Mar-10
20MT120UFP
"Full Bridge" IGBT MTP
Vishay High Power Products
(Ultrafast NPT IGBT), 40 A
100
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
VC E ( V)
20
18
16
14
12
10
8
6
ICE = 10A
ICE = 20A
ICE = 40A
80
I CE (A)
60
40
20
4
2
0
0
2
4
6
VCE (V)
8
10
0
5
10
V GE (V)
15
20
Fig. 7 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 80 μs
120
100
80
60
40
20
0
0.0
1.0
2.0
3.0
V (V)
F
4.0
5.0
VCE (V)
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25 °C
20
-40°C
25°C
125°C
18
16
14
12
10
8
6
4
2
0
5
10
VGE (V)
15
ICE = 10A
ICE = 20A
ICE = 40A
IF (A)
20
Fig. 8 - Typical Diode Forward Characteristics
t
p
= 80 μs
20
18
16
14
VCE (V)
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125 °C
300
ICE = 40A
ICE = 20A
ICE = 10A
200
IC E ( A )
250
T J = 25°C
T J = 150°C
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
150
100
50
0
0
5
10
VGE (V)
15
20
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= - 40 °C
Fig. 12 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
Document Number: 94505
Revision: 01-Mar-10
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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